Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Jun-Chin Huang"'
Autor:
Jun-Chin Huang, 黃俊欽
95
With the progress of the semiconductor technology, the devices scaling down to submicron range leads to increase I/Os number and very fine pitch IC package type; such as BGA, Flip Chip and CSP type packages. For Flip chip packaging, the solde
With the progress of the semiconductor technology, the devices scaling down to submicron range leads to increase I/Os number and very fine pitch IC package type; such as BGA, Flip Chip and CSP type packages. For Flip chip packaging, the solde
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/twqy68
Autor:
Jun-Chin Huang, 黃俊欽
95
In this dissertation, we have successfully fabricated and investigated InAlAs/InGaAs high electron mobility transistors (HEMT’s) by employing different InxGa1-xAs channel designs and fabrication processes to improve the breakdown voltage an
In this dissertation, we have successfully fabricated and investigated InAlAs/InGaAs high electron mobility transistors (HEMT’s) by employing different InxGa1-xAs channel designs and fabrication processes to improve the breakdown voltage an
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/10810457555902033966
Autor:
Jun-Chin Huang, 黃俊欽
90
In this thesis, AlGaAs/InGaAs field-effect transistors using different indium content are fabricated. Furthermore, the □-doped layer effect on the device characteristics has been studied. A superlattice buffer inserted between channel and s
In this thesis, AlGaAs/InGaAs field-effect transistors using different indium content are fabricated. Furthermore, the □-doped layer effect on the device characteristics has been studied. A superlattice buffer inserted between channel and s
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/37689058924083034118
Publikováno v:
Semiconductor Science and Technology. 22:784-787
This study presents a metamorphic heterostructure field-effect transistor with a double δ-doped channel (MDDFET). The coupled δ-doped In0.5Ga0.5As/δ+/In0.5Ga0.5As/In0.6Ga0.4As/In0.5Ga0.5As/δ+/In0.5Ga0.5As channel demonstrates high carrier concent
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e98abb86a9e4261c62e49fd2d969b53f
https://doi.org/10.1088/0268-1242/22/7/018
https://doi.org/10.1088/0268-1242/22/7/018
Publikováno v:
Solid-State Electronics. 51:882-887
The enhancement-mode (E-mode) and depletion-mode (D-mode) device operations on the same chip and their monolithic integration to form a DCFL inverter by using the double δ-doped AlGaAs/InGaAs pseudomorphic high-electron-mobility transistors have bee
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d854af91609b6c6637958b8b9441f29
https://doi.org/10.1016/j.sse.2007.04.015
https://doi.org/10.1016/j.sse.2007.04.015
Publikováno v:
Semiconductor Science and Technology. 21:1675-1680
This work investigates the superior high-temperature and high-linearity characteristics of a double δ-doped AlGaAs/InxGa1−xAs/AlGaAs pseudomorphic high electron mobility transistor (pHEMT) with a symmetrically linearly graded InxGa1−xAs channel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99c140b8a36a3741984397addaf0f67a
https://doi.org/10.1088/0268-1242/21/12/029
https://doi.org/10.1088/0268-1242/21/12/029
Publikováno v:
Semiconductor Science and Technology. 21:619-625
Various static and microwave performances on InAlAs/InGaAs/InP HEMTs with a linearly-graded InxGa1−xAs channel (LGC-HEMT) have been comprehensively investigated and compared to those having a conventional lattice-matched In0.53Ga0.47As channel (LM-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67ac6a4ea9c9483608c2a32fc4161270
https://doi.org/10.1088/0268-1242/21/5/009
https://doi.org/10.1088/0268-1242/21/5/009
Autor:
Wei-Chou Hsu, Tzong-Bin Wang, Yu-Shyan Lin, Jun-Chin Huang, Dong-Hai Huang, Ke-Hua Su, Ching-Hwa Ho
Publikováno v:
Semiconductor Science and Technology. 21:540-543
This investigation proposes the improved double δ-doped InGaP/InGaAs heterostructure field-effect transistor (HFET) grown by metalorganic chemical vapour deposition. The extrinsic transconductance (gm) and saturation current density (Imax) of the do
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::684ce8e0d32a881ab7e26df31fcc2fd3
https://doi.org/10.1088/0268-1242/21/4/021
https://doi.org/10.1088/0268-1242/21/4/021
Publikováno v:
IEEE Transactions on Electron Devices. 53:406-412
This paper proposes a $hbox In_0.5hbox Al_0.5$ As/ $hbox In_xhbox Ga_1-xhbox As$break / $hbox In_0.5hbox Al_0.5hbox As$ $(x=0.3-0.5-0.3)$ metamorphic high-electron mobility transistor with tensile-strained channel. The tensile-strained channel struct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2ab3b77f434c1341e6283ad0b64eae2
https://doi.org/10.1109/ted.2005.863545
https://doi.org/10.1109/ted.2005.863545
Thermal-Stable Characteristics of Metamorphic Double δ-Doped Heterostructure Field-Effect Transistor
Publikováno v:
Japanese Journal of Applied Physics. 46:6595-6597
In this study, we demonstrate the thermal-stable characteristics of a metamorphic double δ-doped heterostructure field-effect transistor (MDDFET). The variations in drain current density and extrinsic transconductance of the studied device are as lo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c43d2cbb71aa9402c95388f73a59a915
https://doi.org/10.1143/jjap.46.6595
https://doi.org/10.1143/jjap.46.6595