Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Jun Wei Fan"'
Autor:
Jun Wei Fan, 樊君偉
95
The traditional material in the Channel of MOSFET is Silicon. But we research the valence band structure of the original strained SixC1-x alloys in the channel. Because of the miniaturization of devices, the channel length abate to~10nm. So t
The traditional material in the Channel of MOSFET is Silicon. But we research the valence band structure of the original strained SixC1-x alloys in the channel. Because of the miniaturization of devices, the channel length abate to~10nm. So t
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/73441998361820029295
Publikováno v:
Chinese Medical Journal, Vol 130, Iss 14, Pp 1670-1676 (2017)
Background: Orthotopic liver transplantation (OLT) improves the prognosis of patients with hepatocellular carcinoma (HCC). Moreover, the complement system is a powerful immune effector that can affect liver function and process of liver cirrhosis. Ho
Externí odkaz:
https://doaj.org/article/125c8bab060c4bafb54f62a838803337
Publikováno v:
Molecular Medicine Reports. Oct2017, Vol. 16 Issue 4, p5495-5498. 4p.
Publikováno v:
Molecular Medicine Reports
The present study aimed to investigate the clinicopathological features of cases of classic Kaposi's sarcoma (CKS) in Xinjiang Uygur Autonomous Region, China, and analyze its etiology and treatment. A total of 114 patients, who were clinicopathologic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f7099de540a2f30167f8de896b0883a0
http://europepmc.org/articles/PMC5647095
http://europepmc.org/articles/PMC5647095
Publikováno v:
Journal of Nanoscience and Nanotechnology. 15:9151-9157
Monolayer transition-metal dichalcogenide is a very promising two-dimensional material for future transistor technology. Monolayer molybdenum disulfide (MoS2), owing to the unique electronic properties of its atomically thin two-dimensional layered s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39a1576041f4f323ae24f509a20ebbd0
https://doi.org/10.1166/jnn.2015.11404
https://doi.org/10.1166/jnn.2015.11404
Subband Structure and Effective Mass in the Inversion Layer of a Strain Si-Based Alloy P-Type MOSFET
Publikováno v:
Journal of Nanoscience and Nanotechnology. 15:2168-2172
In this paper, the subband structure and effective mass of an Si-based alloy inversion layer in a PMOSFET are studied theoretically. The strain condition considered in our calculations is the intrinsic strain resulting from growth of the silicon-carb
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c734649ade1b9c1f5fcb4bb0e48ec8c3
https://doi.org/10.1166/jnn.2015.10220
https://doi.org/10.1166/jnn.2015.10220
Publikováno v:
Key Engineering Materials. 621:9-18
The finite element model of heavy-duty machine tool’s ram components has a large number of elements, many contact pairs for assembly and a large-scale optimization calculation, which make the optimization difficult to conduct. To solve this problem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::180a335c8742fd48a89cb52cbf180c16
https://doi.org/10.4028/www.scientific.net/kem.621.9
https://doi.org/10.4028/www.scientific.net/kem.621.9
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 44:803-807
Carbon nanotubes become stained from coupling with foreign molecules, especially from adsorbing gas molecules. The charge exchange, which is due to the orbital hybridization, occurred in the stained carbon nanotube induces electrical dipoles that con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9c2b01920b3b7f5e290b49908f141c5
https://doi.org/10.1016/j.physe.2011.12.007
https://doi.org/10.1016/j.physe.2011.12.007
Publikováno v:
Advanced Materials Research. :717-721
In order to obtain the thermal comfort work environment, the distribution of temperature and airflow velocity in typical computer room of school building is discussed with different supply air angles and velocities of incidence by CFD model. The calc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa1cdb74e71b7a9d72100ff91f58633f
https://doi.org/10.4028/www.scientific.net/amr.354-355.717
https://doi.org/10.4028/www.scientific.net/amr.354-355.717
Publikováno v:
Journal of the Korean Physical Society. 53:1024-1029
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7935a20014180fd35c3aee359e149cb7
https://doi.org/10.3938/jkps.53.1024
https://doi.org/10.3938/jkps.53.1024