Zobrazeno 1 - 10
of 63
pro vyhledávání: '"Jun Tae Jang"'
Autor:
Dongyeon Kang, Wonjung Kim, Jun Tae Jang, Changwook Kim, Jung Nam Kim, Sung-Jin Choi, Jong-Ho Bae, Dong Myong Kim, Yoon Kim, Dae Hwan Kim
Publikováno v:
IEEE Access, Vol 11, Pp 20196-20201 (2023)
Short- and long-term neuroplasticity behaviors are key mechanisms for various activities. In this paper, we propose a synaptic transistor with a floating-gate (FG) node and an amorphous InGaZnO (IGZO) channel layer. The proposed device emulates the n
Externí odkaz:
https://doaj.org/article/657610b286854e77a74ef877a46306bf
Autor:
Donguk Kim, Je-Hyuk Kim, Woo Sik Choi, Tae Jun Yang, Jun Tae Jang, Attilio Belmonte, Nouredine Rassoul, Subhali Subhechha, Romain Delhougne, Gouri Sankar Kar, Wonsok Lee, Min Hee Cho, Daewon Ha, Dae Hwan Kim
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-13 (2022)
Abstract Amorphous oxide semiconductor (AOS) field-effect transistors (FETs) have been integrated with complementary metal-oxide-semiconductor (CMOS) circuitry in the back end of line (BEOL) CMOS process; they are promising devices creating new and v
Externí odkaz:
https://doaj.org/article/403e73d6d6654c688ba011d2cb313128
Autor:
Dongyeon Kang, Jun Tae Jang, Shinyoung Park, Md. Hasan Raza Ansari, Jong-Ho Bae, Sung-Jin Choi, Dong Myong Kim, Changwook Kim, Seongjae Cho, Dae Hwan Kim
Publikováno v:
IEEE Access, Vol 9, Pp 59345-59352 (2021)
Hardware-oriented neuromorphic computing is gaining great deal of interest for highly parallel data processing and superb energy efficiency, as the candidate for replacement of conventional von Neumann computing. In this work, a novel synaptic transi
Externí odkaz:
https://doaj.org/article/5006e47f327244c5b1389b94aa625031
Autor:
Jun Tae Jang, Jungi Min, Yeongjin Hwang, Sung-Jin Choi, Dong Myong Kim, Hyungjin Kim, Dae Hwan Kim
Publikováno v:
IEEE Access, Vol 8, Pp 192304-192311 (2020)
In this study, we demonstrate both of digital and analog memory operations in InGaZnO (IGZO) memristor devices by controlling the electrode materials for neuromorphic application. The switching properties of the devices are determined by the initial
Externí odkaz:
https://doaj.org/article/fcf32a04df674e328180579a996a12f6
Publikováno v:
Crystals, Vol 12, Iss 5, p 594 (2022)
In this work, the correlation between SiO2 deposition thickness and hydrogen content is discussed and the effect of the SiO2 layer on the properties of synaptic InGaZnO (IGZO) TFTs is analyzed. Three types of IGZO synaptic thin-film transistors (TFTs
Externí odkaz:
https://doaj.org/article/a8a1faa9eca944609a22c587bf441c6c
Autor:
Yongwoo Lee, Jinsu Yoon, Jun Tae Jang, Bongsik Choi, Hyo-Jin Kim, Geon-Hwi Park, Dong Myong Kim, Dae Hwan Kim, Min-Ho Kang, Sung-Jin Choi
Publikováno v:
AIP Advances, Vol 10, Iss 2, Pp 025131-025131-5 (2020)
Solution-processed carbon nanotubes (CNTs) have recently attracted significant attention as p-type thin-film transistor (TFT) channels due to their high carrier mobility, high uniformity, and low process temperature. However, implementing sophisticat
Externí odkaz:
https://doaj.org/article/3df93c39fad54e438377cbfd1cc5ed98
Autor:
Je-Hyuk Kim, Youngjin Seo, Jun Tae Jang, Shinyoung Park, Dongyeon Kang, Jaewon Park, Moonsup Han, Changwook Kim, Dong-Wook Park, Dae Hwan Kim
Publikováno v:
Applied Sciences, Vol 11, Iss 11, p 4838 (2021)
Accurate circuit simulation reflecting physical and electrical stress is of importance in indium gallium zinc oxide (IGZO)-based flexible electronics. In particular, appropriate modeling of threshold voltage (VT) changes in different bias and bending
Externí odkaz:
https://doaj.org/article/ef78f743c7984b7f807cc962a5cb7985
Autor:
Je-Hyuk Kim, Jun Tae Jang, Jong-Ho Bae, Sung-Jin Choi, Dong Myong Kim, Changwook Kim, Yoon Kim, Dae Hwan Kim
Publikováno v:
Micromachines, Vol 12, Iss 3, p 327 (2021)
In this study, we analyzed the threshold voltage shift characteristics of bottom-gate amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) under a wide range of positive stress voltages. We investigated four mechanisms: electron tr
Externí odkaz:
https://doaj.org/article/7e2cbb278b6c404998821b8dbcea8b62
Autor:
Donguk Kim, Jun Tae Jang, Changwook Kim, Hyun Wook Kim, Eunryeong Hong, Sanghyun Ban, Minchul Shin, Hanwool Lee, Hyung Dong Lee, Hyun-Sun Mo, Jiyong Woo, Dae Hwan Kim
Publikováno v:
IEEE Transactions on Electron Devices. 70:514-520
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d9ef7cbd618ed164dcec3fbc5be4ec9
https://doi.org/10.1109/ted.2022.3231818
https://doi.org/10.1109/ted.2022.3231818
Autor:
Donguk Kim, Jun Tae Jang, Changwook Kim, Hyun Wook Kim, Eunryeong Hong, Sanghyun Ban, Minchul Shin, Hanwool Lee, Hyung Dong Lee, Hyun-Sun Mo, Jiyong Woo, Dae Hwan Kim
Publikováno v:
IEEE Transactions on Electron Devices. 70:521-526
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0bd233cae905e1c74e573b22a683601f
https://doi.org/10.1109/ted.2022.3231807
https://doi.org/10.1109/ted.2022.3231807