Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Jun Sik Jeoung"'
Publikováno v:
Journal of the American Ceramic Society. Aug2001, Vol. 84 Issue 8, p1859. 6p. 7 Charts, 11 Graphs.
Publikováno v:
Thin Solid Films. 476:303-311
The effects of the processing conditions on the formation of buried oxide (BOX) layers in low-dose low-energy separation by implanted oxygen materials were investigated by using infrared spectroscopy and transmission electron microscopy. In as-implan
Publikováno v:
Journal of the American Ceramic Society. 84:1859-1864
The effect of the oxidation state of iron on the phase separation of xNa 2 O.(100- x)SiO 2 glasses, x = 18.56 and 13, containing 0.5 mol% Fe 2 O 3 was studied. The oxidation state of iron in the glasses was varied by changing the melting conditions,
Publikováno v:
Journal of Materials Research. 18:2177-2187
Thin separation by implanted oxygen substrates are attractive candidates for low-power, low-voltage electronic devices and can be obtained by low-dose, low-energy oxygen–ion implantation. We report in this study a variation of the process parameter
Autor:
Ravi K. Kukkadapu, W.Howard Poisl, Gary L. Smith, Jun-Sik Jeoung, Hong Li, Michael C. Weinberg, Jarrod V. Crum
Publikováno v:
Journal of Non-Crystalline Solids. 317:301-318
Local environments of ferric and ferrous irons were systematically studied with Mossbauer (at liquid helium temperature) and ultraviolet–visible–near infrared spectroscopic methods for various 18Na2O–72SiO2 glasses doped with 0.5 mol% Fe2O3. Th
Publikováno v:
Journal of Materials Science: Materials in Electronics. 13:303-308
The microstructural changes that occur during annealing of ultra-thin oxygen-implanted silicon-on-insulator have been studied using transmission electron microscopy (TEM), Rutherford backscattering spectrometry (RBS), and Auger electron spectroscopy
Publikováno v:
MRS Proceedings. 716
The microstructure of ultra-thin SIMOX depends strongly on implantation dose, energy and annealing conditions. We used TEM combined with AES and RBS to determine the microstructural evolution of SIMOX wafers subjected to various temperatures during a
Publikováno v:
Microscopy and Microanalysis. 9:504-505
Publikováno v:
Microscopy and Microanalysis. 7:562-563
Silicon-on-insulator (SOI) is becoming a key technology for low power electronics due to substantially reduced power consumption of electronic components, and a capability of compact circuit design which are not readily achievable in bulk silicon tec
Publikováno v:
Journal of Materials Research; Sep2003, Vol. 18 Issue 9, p2177, 11p, 5 Diagrams, 1 Chart, 5 Graphs