Výsledky vyhledávání - "Jun Norimatsu"

Improvement on 150 mm 4H-SiC Epitaxial Wafer Quality

Autor: Hitoshi Osawa, Akira Miyasaka, Kenji Momose, Jun Norimatsu, Daisuke Muto, Yutaka Tajima, Masuda Tatsuya

Publikováno v: Materials Science Forum. 858:201-204

For the popularization of SiC power device, improvement on both productivity and quality of 150 mm diameter SiC epitaxial wafer is inevitable. With highly productive 8x150-mm CVD reactor, we have grown epitaxial layer on 4° off 4H-SiC wafer Si-and C

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a08359e5f1bbb1dfa564367128fbcfff
https://doi.org/10.4028/www.scientific.net/msf.858.201

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4H-SiC Epitaxial Growth on C-Face 150 mm SiC Substrate

Autor: Yuji Osawa, Hiroshi Osawa, Taichi Okano, Michiya Odawara, Jun Norimatsu, Takayuki Sato, Akira Miyasaka, Daisuke Muto, Yutaka Tajima, Fukada Keisuke, Yoshiaki Kageshima, Kenji Momose

Publikováno v: Materials Science Forum. :193-196

The production of 150 mm-diameter SiC epitaxial wafers is the key to the spread of SiC power devices. We have developed production technology of the epitaxial growth for 4° off Carbon face (C-face) 4H-SiC epitaxial layers on 150 mm diameter substrat

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e48514c06b82733b480035ae9d74a64e
https://doi.org/10.4028/www.scientific.net/msf.778-780.193

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Step-Bunching Free and 30 μm-Thick SiC Epitaxial Layer Growth on 150 mm SiC Substrate

Autor: Yuji Osawa, Takayuki Sato, Daisuke Muto, Fukada Keisuke, Akira Miyasaka, Taichi Okano, Yutaka Tajima, Jun Norimatsu, Hiroshi Osawa, Kimura Yusuke, Kenji Momose, Michiya Odawara

Publikováno v: Materials Science Forum. :197-200

The production of 150 mm-diameter SiC epi-wafers is the key to the spread of SiC power devices. Besides, step-bunching free surface leads to high-performance devices. We have developed the production technology of the epitaxial growth with smooth sur

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bb415e480a0b7564fb7679e7571076d5
https://doi.org/10.4028/www.scientific.net/msf.740-742.197

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222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire

Autor: Norimichi Noguchi, Sachie Fujikawa, Norihiko Kamata, Hideki Hirayama, Jun Norimatsu, Takayoshi Takano, Kenji Tsubaki

Publikováno v: physica status solidi (a). 206:1176-1182

We demonstrate 222–282 nm AlGaN and InAlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs) fabricated on low threading dislocation density (TDD) AlN template. Low TDD AlN templates were realized by using ammonia (NH3) pulse-flow multilay

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a553139e5ce7fd76437a3d2b3d43744d
https://doi.org/10.1002/pssa.200880961

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Milliwatt power 270 nm‐band AlGaN deep‐UV LEDs fabricated on ELO‐AlN templates

Autor: Norimichi Noguchi, Sachie Fujikawa, Takayoshi Takano, Kenji Tsubaki, Hideki Hirayama, Jun Norimatsu, Norihiko Kamata

Publikováno v: physica status solidi c. 6

We demonstrated CW milliwatt power operations of 270 nm-band AlGaN multi-quantum well (MQW) deep-ultraviolet (DUV) light-emitting diodes (LEDs) fabricated on epitaxial lateral overgrowth (ELO) AlN templates on sapphire. An initial AlN stripe layer wa

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e46e130149a786ca5544f8af37f292cc
https://doi.org/10.1002/pssc.200880959

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Fabrication of a low threading dislocation density ELO‐AlN template for application to deep‐UV LEDs

Autor: Jun Norimatsu, Hideki Hirayama, Norihiko Kamata, Takayoshi Takano, Kenji Tsubaki, Sachie Fujikawa

Publikováno v: physica status solidi c. 6

We have fabricated low threading dislocation density (TDD) AlN templates on sapphire substrates for application to deep-ultraviolet (DUV) light-emitting diodes (LEDs) by employing an epitaxial lateral overgrowth (ELO) process. An AlN stripe structure

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::08b788067e270c6d9d5e2293b7f8293e
https://doi.org/10.1002/pssc.200880958

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222-282 nm AlGaN and InAlGaN based deep-UV LEDs fabricated on high-quality AlN template

Autor: Norihiko Kamata, Hideki Hirayama, Jun Norimatsu, Takayoshi Takano, Kenji Tsubaki, Sachie Fujikawa, Norimichi Noguchi

Publikováno v: SPIE Proceedings.

We demonstrate 222-282 nm AlGaN and InAlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs) fabricated on low threading dislocation density (TDD) AlN template. Low TDD AlN templates were realized by using ammonia (NH3) pulse-flow multilayer

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::92e5188896708c83c0cc25319e57a055
https://doi.org/10.1117/12.809729

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