Zobrazeno 1 - 10
of 84
pro vyhledávání: '"Jun Nara"'
Publikováno v:
npj 2D Materials and Applications, Vol 6, Iss 1, Pp 1-7 (2022)
Abstract The structure and morphology of monolayer 2H-MoTe2 on GaAs(111)B grown by molecular-beam epitaxy have been studied using scanning tunneling microscopy, electron diffraction, and X-ray photoelectron spectroscopy. The MoTe2 film grown and anne
Externí odkaz:
https://doaj.org/article/43c60eec1af34c58b53ef6b663438ce0
Publikováno v:
AIP Advances, Vol 9, Iss 3, Pp 035309-035309-4 (2019)
We theoretically investigated the dynamics of oxygen vacancies (Vo’s) and the effect of changing their charge states by performing first-principles molecular dynamics simulations at a temperature of 1000 K. Calculations were performed for two struc
Externí odkaz:
https://doaj.org/article/be6b8257bda04651af3e89a07247112b
Publikováno v:
Matter. 6:493-505
Publikováno v:
The Journal of Physical Chemistry C. 125:1048-1053
We reveal by first-principles calculations that the interlayer binding in a twisted MoS2/MoTe2 heterobilayer decreases with the increasing twist angle, due to the increase of the interlayer overlap...
Autor:
Keisuke Sagisaka, Jun Nara, Jill K. Wenderott, Ryo Kadowaki, Akane Maruta, Tadashi Abukawa, Daisuke Fujita
Publikováno v:
Physical Review Materials. 6
Autor:
Wen-Tong Geng, Jian Bo Lin, Vei Wang, Qiang Gu, Qing Peng, Takahisa Ohno, Jun Nara, Sneak Peek Administrator
Publikováno v:
SSRN Electronic Journal.
Autor:
Kazuo Minami, Takahisa Ohno, Junichiro Koga, Toshihiro Kato, Akiyoshi Kuroda, Tsuyoshi Uda, Takahiro Yamasaki, Jun Nara
Publikováno v:
Computer Physics Communications. 244:264-276
Density functional calculations with a plane-wave basis set are widely used in materials science. Due to recent developments in high-performance computers, the number of nodes equipped in such computers greatly exceeds the number of atoms included in
Autor:
Nobuo Tajima, Hiroya Nitta, Jun Nara, Taku Ozawa, Kosuke Ohata, Takahiro Yamasaki, Takahisa Ohno
Publikováno v:
Journal of The Electrochemical Society. 166:B3156-B3162
Autor:
Yoshiyuki Yamashita, Jun Nara, Efi Dwi Indari, Takahiro Yamasaki, Takahisa Ohno, Ryu Hasunuma
Publikováno v:
Journal of Applied Physics. 131:215303
We investigated the atomic structures of the interface states (gap states) at the SiO2/4H-SiC(0001) interface using hard x-ray photoelectron spectroscopy (HAXPES), operando hard x-ray photoelectron spectroscopy, extended x-ray absorption fine structu
Publikováno v:
Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials.