Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Jun Kwan Kim"'
Autor:
Ji Su Kim, Jun Kwan Kim
Publikováno v:
Journal of the Association of Korean Geographers. 6:395-405
Publikováno v:
Journal of Applied Physics; 2014, Vol. 115 Issue 5, p1-6, 6p, 1 Chart, 7 Graphs
Publikováno v:
Thin Solid Films. 546:362-366
The phase transition of hydrogenated SiGe (SiGe:H) films in plasma enhanced chemical vapor deposition was investigated by varying Ge content and hydrogen dilution ratio, R ; the phase transition was then compared with that of hydrogenated Si (Si:H).
Autor:
Jun Kwan Kim, Jianbo Gao, Tae-Soo You, Sarah Kim, Matthew C. Beard, Jong-Ryul Jeong, Tae-Soo Lee, Sohee Jeong, Eung-Sug Lee, Hey Jin An, Jung Hoon Song, Jun-Ho Jeong
Publikováno v:
ACS Applied Materials & Interfaces. 5:3803-3808
The improvement of power conversion efficiency, especially current density (Jsc), for nanocrystal quantum dot based heterojunction solar cells was realized by employing a trenched ZnO film fabricated using nanoimprint techniques. For an optimization
Publikováno v:
Electrochemical and Solid-State Letters. 15:B9-B12
Amorphous SiGe:H (a-SiGe:H) single junction solar cells having light absorbing layers with different Ge profiles were fabricated to investigate the effects of the Ge composition profiles on the solar cell performance. The structures of a-SiGe:H layer
Publikováno v:
Current Applied Physics. 10:S451-S454
Gallium-doped zinc oxide (GZO) films were studied using rf-magnetron sputter deposition technique for the use of transparent conducting oxide film. The effects of deposition parameters such as pressure, rf-power, and film thickness on electrical and
Publikováno v:
Thin Solid Films. 517:4242-4245
The etching characteristics and mechanisms of ZnO thin films in an HBr/Ar inductively coupled plasma were investigated. The etch rate of ZnO was measured as a function of the HBr/Ar mixing ratio in the range of 0–100% Ar at a fixed gas pressure (6
Publikováno v:
Materials Letters. 63:679-682
We synthesized vertically aligned ZnO nanowires on SiO 2 wafer using the Au, ZnO and Au/ZnO seed layers through the physical vapor deposition process. The growth direction of ZnO nanowire was controlled by using the three different seed layers. From
Publikováno v:
Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials.
Publikováno v:
Applied Physics Letters. 102:193902
We fabricated the PbS nanocrystal quantum dots (NQDs) based Schottky structure device (ITO/PbS/LiF/Al) with varying bandgap of NQDs from 0.8 to 2.2 eV. The open-circuit voltage increased monotonically with NQD's bandgap until 0.67 V, achieved using e