Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Jun Hyung Jeong"'
Autor:
Hyoun Ji Ha, Min Gye Kim, Jin Hyun Ma, Jun Hyung Jeong, Min Ho Park, Seong Jae Kang, Wonsik Kim, Soohyung Park, Seong Jun Kang
Publikováno v:
Scientific Reports, Vol 13, Iss 1, Pp 1-9 (2023)
Abstract Low-temperature processing is important for improving the stability and performance of flexible quantum dot light-emitting diodes (QLEDs). In this study, QLEDs were fabricated using poly[bis(4-phenyl) (2,4,6-trimethylphenyl)amine] (PTAA) as
Externí odkaz:
https://doaj.org/article/e5951d74086249eeab1ee0a71b610851
Autor:
Seong Jae Kang, Jun Hyung Jeong, Jin Hyun Ma, Min Ho Park, Hyoun Ji Ha, Jung Min Yun, Yu Bin Kim, Seong Jun Kang
Publikováno v:
Micromachines, Vol 15, Iss 3, p 318 (2024)
Visible light photodetectors are extensively researched with transparent metal oxide holes/electron layers for various applications. Among the metal oxide transporting layers, nickel oxide (NiO) and zinc oxide (ZnO) are commonly adopted due to their
Externí odkaz:
https://doaj.org/article/6f33764b8c65460ebbca0600402eba5c
Autor:
Yu Bin Kim, Jun Hyung Jeong, Min Ho Park, Jung Min Yun, Jin Hyun Ma, Hyoun Ji Ha, Seong Jae Kang, Seong Jun Kang
Publikováno v:
Materials, Vol 17, Iss 3, p 677 (2024)
In this study, we demonstrated the effective separation of charge carriers within the IGZO/IZO heterostructure by incorporating IZO. We have chosen IGZO for its high mobility and excellent on–off switching behavior in the front channel of our oxide
Externí odkaz:
https://doaj.org/article/c716512a38ad4f7e8986135d0ea879cf
Autor:
Jin Hyun Ma, Min Gye Kim, Jun Hyung Jeong, Min Ho Park, Hyoun Ji Ha, Seong Jae Kang, Seong Jun Kang
Publikováno v:
Materials, Vol 16, Iss 11, p 4053 (2023)
We present a study on the potential use of sulfuric acid-treated poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) as a viable alternative to indium tin oxide (ITO) electrodes in quantum dot light-emitting diodes (QLEDs). ITO, desp
Externí odkaz:
https://doaj.org/article/6ecf45d5c8964589a7f92b2a182babfb
Autor:
Min Ho Park, Min Gye Kim, Jin Hyun Ma, Jun Hyung Jeong, Hyoun Ji Ha, Wonsik Kim, Soohyung Park, Seong Jun Kang
Publikováno v:
Materials, Vol 16, Iss 3, p 972 (2023)
Charge imbalance in quantum-dot light-emitting diodes (QLEDs) causes emission degradation. Therefore, many studies focused on improving hole injection into the QLEDs-emitting layer owing to lower hole conductivity compared to electron conductivity. H
Externí odkaz:
https://doaj.org/article/737d1e83b32241759cbf5fdae978d862
Autor:
Jun Hyung Jeong, Min Gye Kim, Jin Hyun Ma, Min Ho Park, Hyoun Ji Ha, Seong Jae Kang, Min-Jae Maeng, Young Duck Kim, Yongsup Park, Seong Jun Kang
Publikováno v:
Materials, Vol 15, Iss 24, p 8977 (2022)
One of the major obstacles in the way of high−performance quantum dot light−emitting diodes (QLEDs) is the charge imbalance arising from more efficient electron injection into the emission layer than the hole injection. In previous studies, a bal
Externí odkaz:
https://doaj.org/article/95894e2086a34a69b6612f4f50095065
Autor:
Hyoun Ji Ha, Seong Jae Kang, Jun Hyung Jeong, Jin Hyun Ma, Min Ho Park, Wonsik Kim, Aelim Ha, Seunghwan Kim, Soohyung Park, Seong Jun Kang
Publikováno v:
ACS Applied Materials & Interfaces; 7/31/2024, Vol. 16 Issue 30, p40139-40148, 10p
Autor:
Min Gye Kim, Jae Seung Shin, Jin Hyun Ma, Jun Hyung Jeong, Dong Hee Han, Beom-Su Kim, Woojin Jeon, Yongsup Park, Seong Jun Kang
Publikováno v:
Journal of Materials Chemistry C. 10:7294-7303
Al-doped TiO2 (ATO) interfacial layer improves the charge balance and the performance of quantum-dot light-emitting diodes (QLEDs).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2beebb8b7eb4708525e743dd84c40270
https://doi.org/10.1039/d2tc00678b
https://doi.org/10.1039/d2tc00678b
Autor:
Jae Seung Shin, Mingye Kim, Jin Hyun Ma, Jun Hyung Jeong, Hui Wung Hwang, Jeong Won Kim, Seong Jun Kang
Publikováno v:
Journal of Materials Chemistry C. 10:5590-5597
Vanadium oxide (V2O5) doped with Li (5, 10, and 15 mol%) was synthesized using an easy and low-cost solution process method and was used as a hole-injection layer (HIL) for quantum-dot light-emitting diodes (QLEDs).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23d778de71cc7445706bb6be6dbddf36
https://doi.org/10.1039/d1tc06117h
https://doi.org/10.1039/d1tc06117h
Publikováno v:
Journal of Materials Chemistry C. 10:14770-14777
A visible-light phototransistor have been fabricated by adding a solution-processed thin Al2O3 layer under the ZnO layer to improve the visible-light photodetection.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e091442ddcaaf78b603702086b99f9a
https://doi.org/10.1039/d2tc02500k
https://doi.org/10.1039/d2tc02500k