Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Jun Hyuck Kwon"'
Publikováno v:
Journal of the Korean Wood Science and Technology. 48:710-721
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a2b247b26d5605962bcdb43d11ad5e4
https://doi.org/10.5658/wood.2020.48.5.710
https://doi.org/10.5658/wood.2020.48.5.710
Publikováno v:
Korean Journal of Materials Research. 28:208-213
Epitaxial (1120) a-plane GaN films were grown on a (1102) R-plane sapphire substrate with photoresist (PR) masks using metal organic chemical vapor deposition (MOCVD). The PR mask with striped patterns was prepared using an ex-situ lithography proces
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::04c0753c90d0376788d6c0cb33b0a083
https://doi.org/10.3740/mrsk.2018.28.4.208
https://doi.org/10.3740/mrsk.2018.28.4.208
Autor:
Samseok Jang, Dohan Lee, Jun-hyuck Kwon, Sang-il Kim, So young Yim, Jaesang Lee, Ji Hun Park, Dongjin Byun
Publikováno v:
Japanese Journal of Applied Physics. 51:115501
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98de28164c8552daf440a86b78a74e21
https://doi.org/10.7567/jjap.51.115501
https://doi.org/10.7567/jjap.51.115501
Autor:
Dongjin Byun, Samseok Jang, So Young Yim, Sang-Il Kim, Do-Han Lee, Jaesang Lee, Jun Hyuck Kwon, Ji Hun Park
Publikováno v:
Japanese Journal of Applied Physics. 51:115501
Epitaxial lateral overgrowth (ELO) a-plane GaN samples were successfully grown on masked sapphire (11̄02) substrates using an in-situ carbonized photoresist (PR) mask by a metalorganic chemical vapor deposition (MOCVD) method. The PR masks for the E
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b97e95de2ef1361892c319df8768bafd
https://doi.org/10.1143/jjap.51.115501
https://doi.org/10.1143/jjap.51.115501