Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Jun Ho Eom"'
Autor:
Seungyeop Ahn, Jinha Lim, Jun Ho Eom, Seong-Min Ryu, Hyun-Jin Lee, Young Ho Kim, Sanghyeon Kim
Publikováno v:
Infrared Technology and Applications XLIX.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35175d253b4c4d3e9ee17df6dc602fe3
https://doi.org/10.1117/12.2663731
https://doi.org/10.1117/12.2663731
Autor:
Hyun-Jin Lee, Young Chul Kim, Jun Ho Eom, Hyun Chul Jung, Ko-Ku Kang, Seong Min Ryu, Ahreum Jang, Tae Hee Lee, Jong Gi Kim, Young Ho Kim, Han Jung
Publikováno v:
Journal of Electronic Materials. 51:4689-4694
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92e24c44bbe779ee5780aa0decd7c65d
https://doi.org/10.1007/s11664-022-09703-7
https://doi.org/10.1007/s11664-022-09703-7
Autor:
Ahreum Jang, Hyun-Jin Lee, Young Chul Kim, Jun Ho Eom, Hyun Chul Jung, Ko-Ku Kang, Sung Min Ryu, Tae Hee Lee, Jong Gi Kim, Young Ho Kim, Han Jung
Publikováno v:
Journal of Electronic Materials. 51:4681-4688
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37f084680ee9c84af130e0b5ce415623
https://doi.org/10.1007/s11664-022-09664-x
https://doi.org/10.1007/s11664-022-09664-x
Autor:
Ko Ku Kang, Seong Min Ryu, Tae Hee Lee, Jong Gi Kim, Ahreum Jang, Hyun Chul Jeong, Jun Ho Eom, Young Chul Kim, Hyun-Jin Lee, Young Ho Kim, Han Jung, Sun Ho Kim, Jong Hwa Choi
Publikováno v:
Infrared Technology and Applications XLVIII.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d320302c9733a77d59cf3165d33b0ee3
https://doi.org/10.1117/12.2606352
https://doi.org/10.1117/12.2606352
Autor:
Hyun-Jin Lee, Young Chul Kim, Jun Ho Eom, Hyun Chul Jeong, Ko Ku Kang, Seong Min Ryu, Ahreum Jang, Tae Hee Lee, Jong Gi Kim, Young Ho Kim, Han Jung
Publikováno v:
Infrared Technology and Applications XLVIII.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f50202a4722813c53a0696e26c7091f
https://doi.org/10.1117/12.2607715
https://doi.org/10.1117/12.2607715
Autor:
Hyun-Jin Lee, Jun Ho Eom, Hyun Chul Jung, Ko-Ku Kang, Seong Min Ryu, Ahreum Jang, Jong Gi Kim, Young Ho Kim, Han Jung, Sun Ho Kim, Jong Hwa Choi
Publikováno v:
Opto-Electronics Review; 2023 Special Issue, Vol. 31, p1-5, 5p
Autor:
Young Ho Kim, Tae Hee Lee, Hyun Jin Lee, Seong Min Ryu, Han Jung, Jun Ho Eom, Jong Hwa Choi, Sun Ho Kim, Jong Gi Kim, Ko Ku Kang, Hyun Chul Jung, Young Chul Kim, Ahreum Jang
Publikováno v:
Infrared Technology and Applications XLVII.
The deep mesa process for pixel isolation with ICP-RIE (Inductively Coupled Plasma – Reactive Ion Etching) was studied to develop InAs/GaSb type-Ⅱ superlattice (T2SL) LWIR photodetector with nBn structure. To reduce the lateral diffusion current
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1e49b2581cf2c4cccf373035da93002
https://doi.org/10.1117/12.2588043
https://doi.org/10.1117/12.2588043
Autor:
Ahreum Jang, Young Chul Kim, Jun Ho Eom, Han Jung, Hyun Chul Jung, Sun Ho Kim, Young Ho Kim, Jong Gi Kim, Jong Hwa Choi, Jung O. Son, Hyun Jin Lee, Tae Hee Lee, Seong Min Ryu, Ko Ku Kang
Publikováno v:
Infrared Technology and Applications XLVII.
High operating temperature(HOT) is the key for low size, weight and power(SWaP) detector development and SWaP detector is the key for modern weapon system such as unmanned aerial vehicle(UAV) and man portable system. The low dark current that determi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::064ac7f18ad82f8d7e0fd985c090d6d9
https://doi.org/10.1117/12.2587857
https://doi.org/10.1117/12.2587857
Autor:
Jong Gi Kim, Ko Ku Kang, Young Ho Kim, Han Jung, Tae Hee Lee, Hyun Chul Jeong, Jun Ho Eom, Jong Hwa Chi, Seong Min Ryu, Sun Ho Kim, Hyun Jin Lee, Jang Ahreum, Young Chul Kim
Publikováno v:
Infrared Technology and Applications XLVII.
We report our recent work on the fabrication of type-II superlattice (T2SL) LWIR nBn photodetectors. It is well known that the dangling bonds or the oxidized element on the etched mesa sidewall increase a dark current. Therefore, the passivation and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af55f4dfb07a15e8d0733bcf1ce86e18
https://doi.org/10.1117/12.2588041
https://doi.org/10.1117/12.2588041
Autor:
Seong Hyeon Ju, Sun Ho Kim, Tae Hee Lee, Jun Ho Eom, Seong Min Ryu, Young Chul Kim, Hyun Ja Im, Han Jung, Young Ho Kim, Nam Hwan Kim, Jung O. Son
Publikováno v:
Infrared Technology and Applications XLV.
Large format high resolution FPAs are the key elements for medium to high performance applications including enhanced vision, thermal sights, and industrial applications. In this work, the characteristics of recently developed 10 μm pitch SXGA InSb
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dccfaa56c518f2aba10bc5e4f4969ac1
https://doi.org/10.1117/12.2518576
https://doi.org/10.1117/12.2518576