Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Jun Geun Kang"'
Autor:
Boram Han, Sung-Kye Park, Woo Young Choi, Kyoung-Rok Han, Sung Jae Chung, Jun Geun Kang, Gyu-Seog Cho
Publikováno v:
2012 12th Annual Non-Volatile Memory Technology Symposium Proceedings.
Dependency of random-dopant-fluctuation (RDF) on NAND flash memory cells has been simulated. It has been shown that the RDF effects are more serious in NAND flash memory cells than in CMOS devices. The simulation results show the variation of thresho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7856b9f93911429deadd4a77e61dae50
https://doi.org/10.1109/nvmts.2013.6632858
https://doi.org/10.1109/nvmts.2013.6632858
Publikováno v:
Japanese Journal of Applied Physics. 53:04ED12
Abnormal cell-to-cell interference occurring in NAND flash memory has been investigated. In the case of extremely downscaled NAND flash memory, cell-to-cell interference increases abnormally. The abnormal cell-to-cell interference has been observed i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1874400e06e0fbf0f7d99bf987ae000a
https://doi.org/10.7567/jjap.53.04ed12
https://doi.org/10.7567/jjap.53.04ed12