Zobrazeno 1 - 10
of 69
pro vyhledávání: '"Jun Furuta"'
Publikováno v:
IEEE Open Journal of Power Electronics, Vol 4, Pp 357-366 (2023)
This paper presents a three-level gate driver for GaN HEMTs (Gallium Nitride High Electron Mobility Transistors) for high false turn-on tolerance and low reverse conduction loss during both dead time at turn-on and turn-off. The proposed gate driver
Externí odkaz:
https://doaj.org/article/143f5b62f15b48e9b8a02f2864b1e411
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 817-824 (2019)
Soft-error tolerance depending on threshold voltage of transistors was evaluated by α -particle, heavy-ion, and neutron irradiation. Three chips were fabricated, one embeds low-threshold general-purpose (GP) transistors and the others embed high-thr
Externí odkaz:
https://doaj.org/article/0177516e56094a168845293418b9e733
Autor:
Kazutoshi Kobayashi, Tomoharu Kishita, Hiroki Nakano, Jun Furuta, Mitsuhiko Igarashi, Shigetaka Kumashiro, Michitarou Yabuuchi, Hironori Sakamoto
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ebb38ceca20ce896f964da353eda85d6
https://doi.org/10.1109/irps48203.2023.10117873
https://doi.org/10.1109/irps48203.2023.10117873
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3023309ccd71b72cc6700b579af63d3f
https://doi.org/10.1109/irps48203.2023.10117957
https://doi.org/10.1109/irps48203.2023.10117957
Publikováno v:
2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e24df5ae1c4916c25a8080e6949d147
https://doi.org/10.1109/imfedk56875.2022.9975373
https://doi.org/10.1109/imfedk56875.2022.9975373
Publikováno v:
2022 IEEE 28th International Symposium on On-Line Testing and Robust System Design (IOLTS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f1d7ad327fad85431d187b5e4bd5412
https://doi.org/10.1109/iolts56730.2022.9897814
https://doi.org/10.1109/iolts56730.2022.9897814
Publikováno v:
IEEE Transactions on Nuclear Science. 68:1727-1735
We found that specific pairs of pMOS and nMOS transistors in dual interlocked storage cell flip flop (DICEFF) become sensitive to soft errors by device simulations. We propose several layout structures that can improve soft-error tolerance with addit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de56f07340fa0ffed56f2c95d9ebefe9
https://doi.org/10.1109/tns.2021.3075176
https://doi.org/10.1109/tns.2021.3075176
Publikováno v:
IEEE Transactions on Nuclear Science. 67:1470-1477
We evaluated soft-error tolerance by neutrons and heavy ions on four types of flip flops (FFs) called D-type flip flop (DFF), guard-gate FF (GGFF), feedback recovery FF (FRFF), and dual FRFF (DFRFF) in a 65-nm thin buried oxide (BOX) fully depleted s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70d9680fa510f8aa379c26315468d402
https://doi.org/10.1109/tns.2020.3002841
https://doi.org/10.1109/tns.2020.3002841
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 33:174-179
Measuring bias temperature instability (BTI) by ring oscillators (ROs) is frequently used. However, the performance of a semiconductor chip is fluctuated dynamically due to bias, temperature and etc. BTI-sensitive and -insensitive ROs are implemented
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a904856a6b37a4920a36b2da6f7013e9
https://doi.org/10.1109/tsm.2020.2983060
https://doi.org/10.1109/tsm.2020.2983060
Publikováno v:
IEICE Transactions on Electronics. :144-152
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b17bcb9376d89614daa8efd85c5c310f
https://doi.org/10.1587/transele.2019cdp0007
https://doi.org/10.1587/transele.2019cdp0007