Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Jun'ichi Shimada"'
Publikováno v:
IEICE Transactions on Information and Systems. :202-212
Congestion inherently occurs on the Internet due to traffic concentration on certain nodes or links of networks. The traffic concentration is caused by inefficient use of topological information of networks in existing routing protocols, which reduce
Publikováno v:
AINA
In a peer-to-peer (P2P) network, where nodes can freely join and leave at any time, the number of participating nodes tends to vary over time. Furthermore, in an unstructured P2P network, where any node can freely select direct linkages with any othe
Publikováno v:
SAINT
Traffic Engineering (TE) is required for reducing highly-loaded links/nodes in a part of networks, thereby reducing the traffic concentration in a part of network. For efficient use of network resources, it is important to efficiently map traffic dem
Publikováno v:
2009 IEEE 13th International Symposium on Consumer Electronics.
Congestion inherently occurs on the network that are shared among several autonomous users due to traffic concentration on certain links. Such an imbalanced traffic load can be caused by network topological features or frequently and independently ch
Publikováno v:
Japanese Journal of Applied Physics. 20:321
The LPE Growth of In1-x Ga x P1-z As z (z ≦0.01) on (1 0 0) GaAs substrates is described with stress on the relation between the compositions of source melts and the quality of grown crystals. The melt in equilibrium with In1-x Ga x P0.99As0.01 lat
Publikováno v:
Japanese Journal of Applied Physics. 22:275
The characteristics of novel optical bistable devices which integrate both interdigital electrodes and amorphous silicon photovoltaic detectors on the Ti-diffused LiNbO3 waveguide are described. In the devices, the transmitted light of the interdigit
Publikováno v:
Japanese Journal of Applied Physics. 20:1001
Publikováno v:
Japanese Journal of Applied Physics. 20:L729
The fabrication of InGaPAs DH diode lasers, about 704 and 725 nm in wave length at 300 K, on GaAs substrates is described. Active layers of DH wafers tend to be rough with increasing the concentration of As in them. The threshold of pulse-current den
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