Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Jun'Ichi Shimizu"'
Autor:
Jun'ichi Shimizu, Takumi Ohashi, Kentaro Matsuura, Iriya Muneta, Kakushima Kuniyuki, Kazuo Tsutsui, Nobuyuki Ikarashi, Hitoshi Wakabayashi
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 2-6 (2019)
Low-carrier density and high-crystallinity molybdenum disulfide (MoS2) films were fabricated by low-temperature and clean process based on a UHV RF sputtering system. This paper focuses on improving crystallinity and reducing the number of sulfur def
Externí odkaz:
https://doaj.org/article/8479b4f0da7940ff8104e132b5edfd81
Autor:
Kentaro Matsuura, Jun'Ichi Shimizu, Mayato Toyama, Takumi Ohashi, Iriya Muneta, Seiya Ishihara, Kuniyuki Kakushima, Kazuo Tsutsui, Atsushi Ogura, Hitoshi Wakabayashi
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 1246-1252 (2018)
We have fabricated large area integrated top-gate ${n}$ MISFETs with sputter-deposited-MoS2 film having n-type operation. A sputtering method enables us to form a large-area MoS2 thin film followed by H2S annealing to compensate sulfur vacancies. Two
Externí odkaz:
https://doaj.org/article/a83116f24e794cb490cc4ec8810be61b
Autor:
Kazuo Tsutsui, Kentaro Matsuura, Iriya Muneta, Hitoshi Wakabayashi, Takumi Ohashi, Jun'ichi Shimizu, Kakushima Kuniyuki, Nobuyuki Ikarashi
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 2-6 (2019)
Low-carrier density and high-crystallinity molybdenum disulfide (MoS2) films were fabricated by low-temperature and clean process based on a UHV RF sputtering system. This paper focuses on improving crystallinity and reducing the number of sulfur def
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::957b99f62a489ec8bf5010f2554ed3fb
https://ieeexplore.ieee.org/document/8516288/
https://ieeexplore.ieee.org/document/8516288/
Autor:
Jun'ichi Shimizu, Hitoshi Wakabayashi, Takumi Ohashi, Kuniyuki Kakushima, Atsushi Ogura, Mayato Toyama, Kazuo Tsutsui, Kentaro Matsuura, Iriya Muneta, Seiya Ishihara
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 1246-1252 (2018)
We have fabricated large area integrated top-gate ${n}$ MISFETs with sputter-deposited-MoS2 film having n-type operation. A sputtering method enables us to form a large-area MoS2 thin film followed by H2S annealing to compensate sulfur vacancies. Two
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ddf19c5e6bcbc57ad8efebd6c2da23d4
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100782443
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100782443
Autor:
Atsushi Ogura, Jun'ichi Shimizu, Seiya Ishihara, Hitoshi Wakabayashi, Takumi Ohashi, Mayato Toyama, Kentaro Matsuura, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui
Publikováno v:
2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM).
We have fabricated a chip-level-integrated top-gate n MISFET with sputter-deposited-MoS 2 film and confirmed n-type operation. A sputtering method enabled us to form a large-scale MoS 2 thin film followed by H2S annealing to compensate sulfur vacanci
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6380a046db5f0084cb594e57c912bdf5
https://doi.org/10.1109/edtm.2018.8421491
https://doi.org/10.1109/edtm.2018.8421491
Autor:
Kazuo Tsutsui, Kuniyuki Kakushima, Jun'ichi Shimizu, Nobuyuki Ikarashi, Hitoshi Wakabayashi, Takumi Ohashi, Kentaro Matsuura, Iriya Muneta
Publikováno v:
2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM).
We investigate low-temperature formation process of sputtered-MoS 2 film. The MoS2 film was formed by radio frequency (RF) sputtering. Then the sputtered-MoS 2 was annealed in H2S at from 200 to 400°C. We find that the hydrogen sulfur (H 2 S) anneal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aba71aba346dc7b8b23a64386e0fec04
https://doi.org/10.1109/edtm.2017.7947572
https://doi.org/10.1109/edtm.2017.7947572
Autor:
Kuniyuki Kakushima, Shin Hirano, Hitoshi Wakabayashi, Takumi Ohashi, Jun'ichi Shimizu, Kentaro Matsuura, Kazuo Tsutsui, Iriya Muneta
Publikováno v:
2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM).
We investigate crystallinity of sputtered MoS 2 films formed in various sputtering conditions to enhance the migration. We found that high substrate temperature, high radio frequency (RF) power and long throw were effective for crystallinity improvem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::315a6529024c51d0c82911b2482bf4f0
https://doi.org/10.1109/edtm.2017.7947578
https://doi.org/10.1109/edtm.2017.7947578
Autor:
Hitoshi Wakabayashi, Takumi Ohashi, Iriya Muneta, Jun'ichi Shimizu, Kentaro Matsuura, Kuniyuki Kakushima, Kazuo Tsutsui
Publikováno v:
Japanese Journal of Applied Physics (JJAP). 56(No. 4S)
We investigate the low-temperature formation of MoS2 films by radio frequency (RF) sputtering. This work is focused on reducing the number of sulfur defects and the improving electrical characteristics of sputtered MoS2 films by low-temperature annea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::44e29c3d64a52417ffafd7063ae03f68
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100830080
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100830080
Akademický článek
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Publikováno v:
NIPPON SHOKUHIN KOGYO GAKKAISHI. 30:339-344
The oligosaccharides produced by the title reaction were dealt with. After removal of the most of palatinose the reaction mixture was used as the sample. Carbon-celite chromatography of the sample(40g, 66° Brix)gave three saccharides(saccharide A, B
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ecb90b0583494ef59cd6947dee10fba
https://doi.org/10.3136/nskkk1962.30.339
https://doi.org/10.3136/nskkk1962.30.339