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pro vyhledávání: '"Julius H ̊allstedt"'
Autor:
Mikael Östling, Bengt Gunnar Malm, Martin von Haartman, Julius H ̊allstedt, Zhen Zhang, Per-Erik Hellström, Shili Zhang
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 2 (2023)
An overview of critical integration issues for future generation MOSFETs towards 10 nm gate length is presented. Novel materials and innovative structures are discussed. The need for high-k gate dielectrics and a metal gate electrode is discussed. Di
Externí odkaz:
https://doaj.org/article/8251508ceaf44c87a486e43006ec420a
