Výsledky vyhledávání - "Julietta Weisse"

Determination of Compensation Ratios of Al-Implanted 4H-SiC by TCAD Modelling of TLM Measurements

Autor: Julietta Weisse, Matthias Kocher, Anton J. Bauer, Zongwei Xu, Tobias Erlbacher, Mathias Rommel, B.T. Yao

Publikováno v: Materials Science Forum. 963:445-448

The prediction of the compensation induced hole concentration reduction in implanted Al regions is a key parameter in developing high power SiC devices. Hall effect measurements are commonly used to determine the compensation ratio of Al implanted re

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::97b8dd93a2da522484e170fa9ef02227
https://doi.org/10.4028/www.scientific.net/msf.963.445

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Quantitative Investigation of Near Interface Traps in 4H-SiC MOSFETs via Drain Current Deep Level Transient Spectroscopy

Autor: Johannes Lehmeyer, Heiko B. Weber, Martin Hauck, Gregor Pobegen, Michael Krieger, Julietta Weisse

Publikováno v: Materials Science Forum. 897:111-114

Drain current DLTS (ID-DLTS) and Hall effect measurements were carried out on two types of 4H-SiC n-MOSFETs, one with a post oxidation annealing (POA) in NO and one in O2 atmosphere. Hall effect measurements show a reduction of Dit by POA in NO compa

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5e53343a0445ed8393d363fe9edc277f
https://doi.org/10.4028/www.scientific.net/msf.897.111

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Influence of Aluminum Compensation Effects in 4H-SiC on the Performance of VDMOS Transistors

Autor: Matthias Kocher, Tobias Erlbacher, Holger Schlichting, Anton J. Bauer, Julietta Weisse

The compensation of charge carriers is an important aspect to be considered in Aluminum doped areas in 4H-SiC. In this paper, a straightforward method has been found to implement compensation effects into a basic device simulation model and to improv

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3b32d0e552b2937b881b4e9ce3c13649

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On the Origin of Threshold Voltage Instability under Operating Conditions of 4H-SiC n-Channel MOSFETs

Autor: Gregor Pobegen, Heiko B. Weber, Martin Hauck, Julietta Weisse, Michael Krieger

Publikováno v: Materials Science Forum. 858:473-476

We report on the threshold voltage () instability under operating conditions after gate bias switches at constant drain voltage for n-MOSFETs fabricated on 4H silicon carbide (4H-SiC). This effect occurs at room temperature and close to the of the de

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::356c3c33ebd041c16277d3dffe28d4b8
https://doi.org/10.4028/www.scientific.net/msf.858.473

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