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pro vyhledávání: '"Julietta Förthner"'
Autor:
Minwho Lim, Constantin Csato, Julietta Förthner, Oleg Rusch, Kevin Ehrensberger, Barbara Kupfer, Susanne Beuer, Susanne Oertel, Dong Wook Byun, Seong Jun Kim, Sang Mo Koo, Hoon Kyu Shin, Tobias Erlbacher
Publikováno v:
Key Engineering Materials. 945:55-59
In this paper, the modeling of SJ-MOSFETs beyond the voltage class of 3.3 kV simulated with verified deep aluminum box-like shaped profiles by using TCAD simulation is described. The simulation results are used to investigate the influence of ion imp