Synthesis of long group IV semiconductor nanowires by molecular beam epitaxy

Autor: Jean Philippe Nys, Tao Xu, Julien Sulerzycki, Bruno Grandidier, Didier Stiévenard, Gilles Patriarche

Publikováno v: Nanoscale Research Letters, Vol 6, Iss 1, p 113 (2011)
Nanoscale Research Letters
Nanoscale Research Letters, SpringerOpen, 2011, 6, pp.113-1-7. ⟨10.1186/1556-276X-6-113⟩
Nanoscale Research Letters, 2011, 6, pp.113-1-7. ⟨10.1186/1556-276X-6-113⟩

We report the growth of Si and Ge nanowires (NWs) on a Si(111) surface by molecular beam epitaxy. While Si NWs grow perpendicular to the surface, two types of growth axes are found for the Ge NWs. Structural studies of both types of NWs performed wit

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http://www.nanoscalereslett.com/content/6/1/113