Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Julien Poulain"'
Autor:
Sergio Colangeli, Walter Ciccognani, Patrick Ettore Longhi, Lorenzo Pace, Antonio Serino, Julien Poulain, Rémy Leblanc, Ernesto Limiti
Publikováno v:
Energies, Vol 14, Iss 18, p 5615 (2021)
This paper is focused on the extraction of the noise parameters of a linear active device by exploiting both forward and reverse noise power measurements associated with different terminations. In order for load-pull measurements to yield a significa
Externí odkaz:
https://doaj.org/article/96bdc308886b4326a4c7a33e5efa2241
Autor:
Patrick E. Longhi, Walter Ciccognani, Antonio Serino, Remy Leblanc, Sergio Colangeli, Julien Poulain, Ernesto Limiti, Lorenzo Pace
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 68:2571-2578
This article addresses the classical problem of determining the extrinsic resistances ( $R_{G}$ , $R_{S}$ , and $R_{D}$ ) of field-effect transistors (FETs) and, in particular, of high-electron-mobility transistors (HEMTs). The presented approach rel
Autor:
Remy Leblanc, Lorenzo Pace, Sergio Colangeli, Walter Ciccognani, Antonio Serino, Patrick E. Longhi, Ernesto Limiti, Julien Poulain
Publikováno v:
Energies
Volume 14
Issue 18
Energies, Vol 14, Iss 5615, p 5615 (2021)
Volume 14
Issue 18
Energies, Vol 14, Iss 5615, p 5615 (2021)
This paper is focused on the extraction of the noise parameters of a linear active device by exploiting both forward and reverse noise power measurements associated with different terminations. In order for load-pull measurements to yield a significa
Autor:
Julien Poulain, F. Lecourt, Ahmed Gasmi, Ahmad Al Hajjar, Adrien Cutivet, Remy Leblanc, Bertrand Wroblewski
Publikováno v:
2020 50th European Microwave Conference (EuMC).
This paper presents the design and test results of a 6 to 18 GHz power amplifier MMIC fabricated with a Gallium Nitride process, using a reactively matched non-distributed architecture. This circuit exhibits a gain of 20 dB, input and output return l
Autor:
Lorenzo Pace, Ernesto Limiti, Julien Poulain, Sergio Colangeli, Walter Ciccognani, Remy Leblanc, Patrick E. Longhi
Publikováno v:
Electronics, Vol 10, Iss 134, p 134 (2021)
Electronics
Volume 10
Issue 2
Electronics
Volume 10
Issue 2
Motivated by the growing interest towards low-cost, restriction-free MMIC processes suitable for multi-function, possibly space-qualified applications, this contribution reports the extraction of reliable linear models for two advanced GaN-on-Si HEMT
Autor:
Silvio Fenu, Lorenzo Pace, Ernesto Limiti, Julien Poulain, Sergio Colangeli, Walter Ciccognani, Antonio Serino, Remy Leblanc, Patrick E. Longhi
Publikováno v:
2019 14th European Microwave Integrated Circuits Conference (EuMIC).
This paper provides an assessment between two MMIC foundry processes for millimetre-wave high-performance receiver applications, namely, OMMIC’s 70 nm GaAs and 60 nm GaN-on-Si processes. To do so, a characterization and modelling campaign was carri
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 64:115-124
A unique direct parameter extraction method for the small-signal equivalent-circuit model of InP/GaAsSb/InP double heterojunction bipolar transistors (DHBTs) is presented. $S$ -parameters measured at cut-off bias are used, at first, to extract the di
Autor:
Francis Auvray, Noelia Santos Ibeas, Peter Frijlink, Gulnar Dagher, Francois Lecourt, Remy Leblanc, Julien Poulain, Ahmed Gasmi
Publikováno v:
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
This paper presents the measured results of two circuits fabricated with a millimeter wave 100 nm Gallium Nitride on Silicon (GaN/Si) process. The first circuit is a 27-34 GHz power amplifier, presenting 6 W of output power in pulsed operation and 5.