Zobrazeno 1 - 10
of 172
pro vyhledávání: '"Julien Pernot"'
Autor:
Eslam Abubakr, Shinya Ohmagari, Abdelrahman Zkria, Hiroshi Ikenoue, Julien Pernot, Tsuyoshi Yoshitake
Publikováno v:
Materials Research Letters, Vol 10, Iss 10, Pp 666-674 (2022)
We report the fabrication of p-n+ diamond homojunction through an innovative approach of laser irradiation in liquid-ambient. A shallow phosphorus-doped layer with a high electric conductivity is processed on top of a p-type diamond substrate to form
Externí odkaz:
https://doaj.org/article/d000384cc95d46418d82516a5c4c3d7d
Autor:
Gonzalo Alba, David Eon, M. Pilar Villar, Rodrigo Alcántara, Gauthier Chicot, Jesús Cañas, Juliette Letellier, Julien Pernot, Daniel Araujo
Publikováno v:
Surfaces, Vol 3, Iss 1, Pp 61-71 (2020)
Concerning diamond-based electronic devices, the H-terminated diamond surface is one of the most used terminations as it can be obtained directly by using H2 plasma, which also is a key step for diamond growth by chemical vapour deposition (CVD). The
Externí odkaz:
https://doaj.org/article/4cdffd5b3e71426c9cefae26ec2a378d
Autor:
Idriss Abid, Riad Kabouche, Catherine Bougerol, Julien Pernot, Cedric Masante, Remi Comyn, Yvon Cordier, Farid Medjdoub
Publikováno v:
Micromachines, Vol 10, Iss 10, p 690 (2019)
In this paper, we present the fabrication and Direct Current/high voltage characterizations of AlN-based thin and thick channel AlGaN/GaN heterostructures that are regrown by molecular beam epitaxy on AlN/sapphire. A very high lateral breakdown volta
Externí odkaz:
https://doaj.org/article/802ee7d0f8cc453e8a1d92b9d0d01a54
Autor:
Marina Gutiérrez, Fernando Lloret, Toan T. Pham, Jesús Cañas, Daniel F. Reyes, David Eon, Julien Pernot, Daniel Araújo
Publikováno v:
Nanomaterials, Vol 8, Iss 8, p 584 (2018)
In contrast to Si technology, amorphous alumina cannot act as a barrier for a carrier at diamond MOSFET gates due to their comparable bandgap. Indeed, gate leaks are generally observed in diamond/alumina gates. A control of the alumina crystallinity
Externí odkaz:
https://doaj.org/article/6910da1c62af419ca41239ac26fcac86
Publikováno v:
Respiratory Medicine and Research. 83:101022
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c56a80f95dc11259f1e5cd6c40f3cd5
https://doi.org/10.1016/j.resmer.2023.101022
https://doi.org/10.1016/j.resmer.2023.101022
Autor:
Julien Pernot, Gwénolé Jacopin, Julien Brochet, Timothée Lassiaz, Pierre Tchoulfian, Fabrice Donatini, Romain Parize
Publikováno v:
Nano Letters
Nano Letters, American Chemical Society, 2021, 21 (8), pp.3372-3378. ⟨10.1021/acs.nanolett.0c04491⟩
Nano Letters, American Chemical Society, 2021, 21 (8), pp.3372-3378. ⟨10.1021/acs.nanolett.0c04491⟩
International audience; Developing nanoscale electrical characterization techniques adapted to three-dimensional (3D) geometry is essential for optimization of the epitaxial structure and doping process of nano- and microwires. In this paper, we demo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c26ae319bf4cddde38f8b4d3a977a880
https://doi.org/10.1021/acs.nanolett.0c04491
https://doi.org/10.1021/acs.nanolett.0c04491
Publikováno v:
Applied Physics Letters
Applied Physics Letters, 2022, 120 (16), pp.162104. ⟨10.1063/5.0087789⟩
Applied Physics Letters, 2022, 120 (16), pp.162104. ⟨10.1063/5.0087789⟩
International audience; Electrical properties of silicon doped AlN nanowires grown by plasma assisted molecular beam epitaxy were investigated by means of temperature dependent current–voltage measurements. Following an Ohmic regime for bias lower
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::95765553ac436f25a682df51948546f1
https://hal.science/hal-03686334
https://hal.science/hal-03686334
Autor:
José P. S. Cardoso, Maria Rosário Correia, Remy Vermeersch, Dirkjan Verheij, Gwenole Jacopin, Julien Pernot, Teresa Monteiro, Susana Cardoso, Katharina Lorenz, Bruno Daudin, Nabiha Ben Sedrine
Publikováno v:
ACS Applied Nano Materials
ACS Applied Nano Materials, 2022, 5 (1), pp.972-984. ⟨10.1021/acsanm.1c03654⟩
ACS Applied Nano Materials, 2022, 5 (1), pp.972-984. ⟨10.1021/acsanm.1c03654⟩
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cce2ad872cbb19871402e9febc8d2315
https://hal.science/hal-04023348
https://hal.science/hal-04023348
Publikováno v:
Applied Physics Letters
Applied Physics Letters, 2023, 122 (9), pp.091106. ⟨10.1063/5.0137424⟩
Applied Physics Letters, 2023, 122 (9), pp.091106. ⟨10.1063/5.0137424⟩
International audience; We show that intentional Ga doping of AlN nanowires in the 0.01%–0.5% range leads to the spontaneous formation of nanometric carrier localization centers. Accordingly, for single nanowires, we observed a collection of sharp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::592cf7ffde96944d3ca2dbf0e52c49ce
https://doi.org/10.1063/5.0137424
https://doi.org/10.1063/5.0137424