Zobrazeno 1 - 10
of 87
pro vyhledávání: '"Julien Nagle"'
Autor:
Aude Leuliet, Paolo Martins, Brigitte Loiseaux, Anne-Charlotte Amiaud, Julien Nagle, Raphaël Aubry, Stéphane Holé
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 19:602-608
In this paper, dielectric charging process in dielectrics under bias voltage is investigated. Dielectric materials, used in numerous devices in microelectronics, can be subjected to significant electrical stress. These high electric fields impact the
Autor:
Julien Nagle, Aude Leuliet, Brigitte Loiseaux, Paolo Martins, Anne-Charlotte Amiaud, Raphaël Aubry, Stéphane Holé
Publikováno v:
2017 International Symposium on Electrical Insulating Materials (ISEIM).
One of the challenges in the microelectronic field is to improve the component reliability. In this work dielectric charging process in capacitive structures under bias voltage is particularly investigated. A new dielectric charging model to study ch
Autor:
Virginie Trinité, Vincent Guériaux, Julien Nagle, Eric Costard, Alexandru Nedelcu, Ezzeddine Ouerghemmi, Mathieu Carras
Publikováno v:
Infrared Physics & Technology. 54:204-208
Our interest is to model the electronic transport in Quantum Well Infrared Photodetectors (QWIPs). Standard modelling was based on self-consistent calculation of the non-uniform electric field with empirical description of the electron capture (Thiba
Publikováno v:
physica status solidi (a). 206:1912-1915
We report on the interplay between compressive strains and defects within the active region of 980 nm emitting high-power diode laser arrays. By analyzing photocurrent data, we show how external mechanical load caused by device packaging results in c
Autor:
Juan Jiménez, M. Pommiès, M. P. Iñiguez, Julien Nagle, Myriam Oudart, Manuel Avella, A. Martín-Martín
Publikováno v:
Journal of Materials Science: Materials in Electronics. 19:140-144
In this work we report the results of damage induced by aging tests of high power AlGaAs based laser bars. Post-laser aging the mirror and cavity degradations are studied by cathodoluminescence (CL). Following the analysis of the CL images the origin
Publikováno v:
Materials Science in Semiconductor Processing. 9:215-219
We discuss strains in high-power diode laser arrays, so-called cm-bars, which serve as a model device for presenting a new methodology for spectroscopic strain analysis in devices. Strain relaxation during device operation as well as the interplay be
Autor:
Manuel Avella, Myriam Oudart, Juan Jiménez, M. Pommiès, P. Resneau, Enrique Cánovas, Julien Nagle
Publikováno v:
physica status solidi (a). 202:625-630
Low-temperature spectrally resolved cathodo luminescence was implemented on degraded AlGaAs-based high-power laser bars to investigate the degradation signatures. We focused on laser bars at different degradation levels and two degradation patterns w
Autor:
Vincent Berger, V. Ortiz, Michel Calligaro, Alfredo De Rossi, Julien Nagle, Sara Ducci, Borge Vinter
Publikováno v:
Semiconductor Science and Technology. 19:L99-L102
A third-order-mode emitting laser diode, which is also intended for use with a phase-matched waveguide, is demonstrated and analysed. The AlGaAs/GaAs heterostructure is engineered to down-convert the laser photons into photon pairs through a parametr
Autor:
Sandy Schwirzke-Schaaf, Myriam Oudart, Y. Sainte-Marie, Jens W. Tomm, Julien Nagle, A. Gerhardt
Publikováno v:
The European Physical Journal Applied Physics. 27:451-454
We present microscopically-resolved photocurrent spectroscopy as a new powerful analytical tool for the simultaneous detection of packaging-induced strain and defects in GaAs-based high-power laser diode arrays (cm-bars). Using the Fourier-transform
Autor:
Carlo Sirtori, Julien Nagle
Publikováno v:
Comptes Rendus Physique. 4:639-648
The quantum cascade laser is a new light source based on resonant tunnelling and optical transitions between quantised conduction band states. In these semiconductor devices the principles of operation arise from the quantum engineering of electronic