Výsledky vyhledávání - "Julien Ladroue"

Flexible CMUT for Vibrating Mesh Nebulize

Autor: Dominique Certon, Laurent Vecellio, Nathalie Heuzé-Vourc'h, Julien Ladroue, Flavien Barcella, Daniel Alquier, Jaweb Ben Messaoud

Publikováno v: 2019 IEEE International Ultrasonics Symposium (IUS).

This work is a feasibility study aiming to demonstrate that CMUT technology could be used as an actuator source for vibrating mesh nebulizer. Ring shape PZT materials are commonly used in commercial products but they suffer from technological limitat

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2365006eab024205ca1e9fbfe325849a
https://doi.org/10.1109/ultsym.2019.8926308

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Parametric study of STiGer etching process in order to reduce extended formation of scalloping defects on the sidewalls of silicon submicron trenches

Autor: Wassim Kafrouni, Mohamed Boufnichel, Julien Ladroue, Thomas Tillocher, Remi Dussart, Pierre Ranson, Philippe Lefaucheux

Publikováno v: Vacuum
Vacuum, Elsevier, 2016, ⟨10.1016/j.vacuum.2016.08.019⟩

A first study was carried out to define the appropriate parameters to create a passivation layer by SiF 4 /O 2 plasma that resists lateral chemical etching by SF 6 plasma via the STiGer process at a substrate temperature of −85 °C. The most effici

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1ff0285b3258ac85999c0d5b4c717c4a
https://hal.archives-ouvertes.fr/hal-01577601

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Deep GaN etching by inductively coupled plasma and induced surface defects

Autor: Pierre Ranson, Philippe Lefaucheux, Julien Ladroue, Mohamed Boufnichel, Remi Dussart, Aline Meritan

Publikováno v: Journal of Vacuum Science and Technology A
Journal of Vacuum Science and Technology A, American Vacuum Society, 2010, 28 (5), pp.1226. ⟨10.1116/1.3478674⟩

GaN etching was studied in Cl2/Ar plasmas as a function of process parameters. In addition, for a better understanding of the etching mechanisms, Langmuir probe measurements and optical emission spectroscopy were carried out. Etch rate was found to d

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b2d25ef7dea7f9e9566766e3635cad90
https://doi.org/10.1116/1.3478674

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Study of dc micro-discharge arrays made in silicon using CMOS compatible technology

Autor: Mukesh Kulsreshath, Lawrence J. Overzet, Olivier Aubry, Remi Dussart, Julien Ladroue, Marion Woytasik, Laurent Schwaederlé, Guillaume Schelcher, Thomas Tillocher, Philippe Lefaucheux

Publikováno v: Journal of Physics D: Applied Physics
Journal of Physics D: Applied Physics, IOP Publishing, 2012, 45, pp.285202. ⟨10.1088/0022-3727/45/28/285202⟩

In this paper we present the fabrication technology used to make micro-discharge ‘reactors’ on a silicon (Si) substrate. For the fabrication of these reactors we have used Si wafers with 4 inch diameter and standard cleanroom facilities. The fabr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a363ceab23865fb327d7a79f21a3cb31
https://hal.archives-ouvertes.fr/hal-00713105

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Optimization of submicron deep trench profiles with the STiGer cryoetching process: reduction of defects

Autor: Mohamed Boufnichel, Philippe Lefaucheux, Remi Dussart, Wassim Kafrouni, Thomas Tillocher, Pierre Ranson, Julien Ladroue

Publikováno v: Journal of Micromechanics and Microengineering
Journal of Micromechanics and Microengineering, IOP Publishing, 2011, 21, pp.085005. ⟨10.1088/0960-1317/21/8/085005⟩

International audience; The STiGer process is a time-multiplexed cryogenic etching method designed to achieve high aspect ratio structures on silicon. SF6 or SF6/O2 plasmas are used as etch cycles and SiF4/O2 plasmas are used as passivation cycles. T

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8ac081badc3fd71f227fcd53e6cf87f2
https://hal.archives-ouvertes.fr/hal-00655002

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Improvement of GaN Deep Etched Surface State by Fluorination Dedicated to Power Devices

Autor: Philippe Lefaucheux, Mohamed Boufnichel, Julien Ladroue, Nicolas Gosset, Thomas Tillocher, Remi Dussart

Publikováno v: 226th meeting of the Electrochemical Society
226th meeting of the Electrochemical Society, Oct 2014, Cancun, Mexico

Gallium nitride (GaN) is a III-V semiconductor with a large and direct bandgap (3.4 eV). Due to this bandgap, GaN is already used in optoelectronic applications for blue Light Emitting Diodes (LED), white LED and Blu-ray disc. Furthermore, GaN has a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::71d6244555f4967e9b03b871cd8cb85b
https://doi.org/10.1149/ma2014-02/40/1992

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