Ge Content Optimization in Ge(SbSe)N OTS Materials for Selector Applications

Autor: Camille Laguna, Mathieu Bernard, Frederic Fillot, Denis Rouchon, Nevine Rochat, Julien Garrione, Lucie Prazakova, Emmanuel Nolot, Valentina Meli, Niccolo Castellani, Simon Martin, Chiara Sabbione, Guillaume Bourgeois, Marie-Claire Cyrille, Liviu Militaru, Abdelkader Souifi, Francois Andrieu, Gabriele Navarro

Publikováno v: IEEE Transactions on Electron Devices

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c3db138f27cecd4f37e3ce99ddea1996

Multilayered Sb-Rich GeSbTe Phase-Change Memory for Best Endurance and Reduced Variability

Autor: Giusy Lama, Mathieu Bernard, Guillaume Bourgeois, Julien Garrione, Valentina Meli, Niccolo Castellani, Chiara Sabbione, Lucie Prazakova, Diana-Stephany Fernandez Rodas, Emmanuel Nolot, Marie Claire Cyrille, Francois Andrieu, Gabriele Navarro

Publikováno v: IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, 2022, 69 (8), pp.4248-4253. ⟨10.1109/TED.2022.3184659⟩

International audience; Sb-rich GeSbTe based Phase-Change Memories (PCM) were studied in the last years for their high switching speed to target Storage Class Memory (SCM) applications. In this work, we show the advantages of an engineered Multilayer

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9eb39f48093789ad198f60c0c679ea36