Vertical travelling scatterometry for metrology on fully integrated devices

Autor: Daniel Schmidt, Manasa Medikonda, Michael Rizzolo, Claire Silvestre, Julien Frougier, Andrew Greene, Mary A. Breton, Aron Cepler, Jacob Ofek, Itzik Kaplan, Roy Koret, Igor Turovets

Publikováno v: Metrology, Inspection, and Process Control XXXVI.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3b7df66fb6830c90dae8516a7276ceb8
https://doi.org/10.1117/12.2614077

Development of SiGe Indentation Process Control for Gate-All-Around FET Technology Enablement

Autor: Daniel Schmidt, Aron Cepler, Curtis Durfee, Shanti Pancharatnam, Julien Frougier, Mary Breton, Andrew Greene, Mark Klare, Roy Koret, Igor Turovets

Methodologies for characterization of the lateral indentation of silicon-germanium (SiGe) nanosheets using different non-destructive and in-line compatible metrology techniques are presented and discussed. Gate-all-around nanosheet device structures

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a0b883d3edd86a617680648728b9db75

(Invited) Epitaxy of (SiGe/Si) Superlattices for the Fabrication of Horizontal Gate-All-Around Nanosheet Transistors

Autor: Nicolas J Loubet, Juntao Li, Robin Chao, Chunwing Yeung, Julien Frougier, Curtis Durfee, Abraham Arceo de la Pena, Raja Muthinti, Zhenxing Bi, Muthumanickam Sankarapandian, Wenyu Xu, Yann Mignot, Stuart Sieg, Richard Conti, Basker Veeraraghavan, Hemanth Jagannathan, Bala Haran, Rama Divakaruni, Huiming Bu

Publikováno v: ECS Meeting Abstracts. :1075-1075

Stacked horizontal Gate All Around Nanosheet transistors were recently proposed as a replacement of FinFET for the sub-7nm device nodes. In order to stack Nanosheet channels, a specific SiGe/Si superlattice epitaxy is employed, with SiGe being used a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::75819870937ee9f5b927c429f58eaaf4
https://doi.org/10.1149/ma2018-02/31/1075

Control of light polarization using spin-injected opto-electronic devices with vertical geometries

Autor: Julien Frougier, Tiantian Zhang, Shiheng Liang, Phillipe Barate, Pierre Renucci, Xavier Marie, Ghaya Baili, Mehdi Alouini, Isabelle Sagnes, Arnaud Garnache, Henri Jaffrès, Yuan LU, Jean-Marie George

Publikováno v: HAL
Spintronics VII
Spintronics VII, Aug 2014, San Diego, United States
Spintronics VII, Aug 2014, San Diego, United States. 〈http://spie.org/OP14N/conferencedetails/spintronics〉

International audience; In the past decade, a continous interest and a research effort have been dedicated to the study of spin injection into Semiconductor-based Light Emitting Device such as Spin-Light Emitting Diodes (Spin-LEDs) [1,2] and more rec

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::78b063c972feed9af77641b06e9f9382
https://hal.archives-ouvertes.fr/hal-01142159