Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Julian López‐Vidrier"'
Autor:
Sergio González, Giovanni Vescio, Juan Luis Frieiro, Alina Hauser, Flavio Linardi, Julian López‐Vidrier, Marek Oszajca, Sergi Hernández, Albert Cirera, Blas Garrido
Publikováno v:
Advanced Materials Interfaces, Vol 10, Iss 15, Pp n/a-n/a (2023)
Abstract Transparent Conducting Oxides (TCOs) are an enticing family of optoelectronic materials which have been proven to increase efficiency when incorporated into perovskite light emitting diode (PE‐LED) and organic OLED architectures as transpo
Externí odkaz:
https://doaj.org/article/54b18eb98bbe47b0a6771cb611e19cc0
Autor:
Daniel Hiller, Julian López-Vidrier, Keita Nomoto, Michael Wahl, Wolfgang Bock, Tomáš Chlouba, František Trojánek, Sebastian Gutsch, Margit Zacharias, Dirk König, Petr Malý, Michael Kopnarski
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 9, Iss 1, Pp 1501-1511 (2018)
Phosphorus- and boron-doped silicon nanocrystals (Si NCs) embedded in silicon oxide matrix can be fabricated by plasma-enhanced chemical vapour deposition (PECVD). Conventionally, SiH4 and N2O are used as precursor gasses, which inevitably leads to t
Externí odkaz:
https://doaj.org/article/3a00241b85f74d19a10444fca60bd633
Autor:
Daniel Hiller, Julian López-Vidrier, Sebastian Gutsch, Margit Zacharias, Michael Wahl, Wolfgang Bock, Alexander Brodyanski, Michael Kopnarski, Keita Nomoto, Jan Valenta, Dirk König
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-11 (2017)
Abstract Boron (B) doping of silicon nanocrystals requires the incorporation of a B-atom on a lattice site of the quantum dot and its ionization at room temperature. In case of successful B-doping the majority carriers (holes) should quench the photo
Externí odkaz:
https://doaj.org/article/aa3a48c9bf124fddb07cb48c20ef97e0
Autor:
Daniel Hiller, Julian López-Vidrier, Sebastian Gutsch, Margit Zacharias, Keita Nomoto, Dirk König
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-12 (2017)
Abstract Phosphorus doping of silicon nanostructures is a non-trivial task due to problems with confinement, self-purification and statistics of small numbers. Although P-atoms incorporated in Si nanostructures influence their optical and electrical
Externí odkaz:
https://doaj.org/article/ad8bc64d60524ad39a69746d9678625a
Autor:
Thomas Tom, Eloi Ros, Julian López-Vidrier, José Miguel Asensi, Pablo Ortega, Joaquim Puigdollers, Joan Bertomeu, Cristobal Voz
Publikováno v:
The Journal of Physical Chemistry Letters. 14:4322-4326
Poly(amidoamine) (PAMAM) dendrimers are used to modify the interface of metal-semiconductor junctions. The large number of protonated amines contributes to the formation of a dipole layer, which finally serves to form electron selective contacts in s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4ca149b2213b939fda83fa95c5370c99
https://doi.org/10.1021/acs.jpclett.3c00643
https://doi.org/10.1021/acs.jpclett.3c00643
Autor:
David Rovira, Eloi Ros, Thomas Tom, Maykel Jiménez, José Miguel Asensi, Cristobal Voz, Julian López-Vidrier, Joaquim Puigdollers, Joan Bertomeu, Edgardo Saucedo
Publikováno v:
International Journal of Molecular Sciences
Volume 24
Issue 4
Pages: 3088
Volume 24
Issue 4
Pages: 3088
High open-circuit voltage in Sb2Se3 thin-film solar cells is a key challenge in the development of earth-abundant photovoltaic devices. CdS selective layers have been used as the standard electron contact in this technology. Long-term scalability iss
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a144429a41d40a7f73ac593ed498ca25
https://hdl.handle.net/2117/385619
https://hdl.handle.net/2117/385619
Autor:
Thomas Tom, Eloi Ros, David Rovira, Julian López‐Vidrier, José Miguel Asensi, Pablo Ortega, Joaquim Puigdollers, Cristobal Voz, Joan Bertomeu
Publikováno v:
Advanced Materials Technologies. 8:2200936
This is the peer reviewed version of the following article: Tom, T. [et al.]. Deoxyribonucleic acid-based electron selective contact for crystalline silicon solar cells. "Advanced materials technologies (Weinheim)" [en línia], 10 Febrer 2023, [Consu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::62111e692b502460c2401c1733f1e24b
https://doi.org/10.1002/admt.202200936
https://doi.org/10.1002/admt.202200936
Autor:
Giovanni, Vescio, Gemma, Martín, Albert, Crespo-Yepes, Sergi, Claramunt, Daniel, Alonso, Julian, López-Vidrier, Sonia, Estradé, Marc, Porti, Rosana, Rodríguez, Francesca, Peiró, Albert, Cornet, Albert, Cirera, Montserrat, Nafría
Publikováno v:
ACS applied materialsinterfaces. 11(26)
Low-power, high-performance metal-insulator-metal (MIM) non-volatile resistive memories based on HfO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::d327a5850577512914c0ec8622c6b1f1
https://pubmed.ncbi.nlm.nih.gov/31180626
https://pubmed.ncbi.nlm.nih.gov/31180626
Autor:
Sònia Estradé, Julian López-Vidrier, O. Blázquez, Jordi Ibáñez, Francesca Peiró, Sergi Hernández, Blas Garrido, Lluís López-Conesa, J. L. Frieiro
Publikováno v:
Dipòsit Digital de la UB
Universidad de Barcelona
Digital.CSIC. Repositorio Institucional del CSIC
instname
Universidad de Barcelona
Digital.CSIC. Repositorio Institucional del CSIC
instname
In this work, the fabrication and the structural, optical and electrical properties of Al-Tb/SiO2 nanomultilayers have been studied. The nanomultilayers were deposited by means of electron beam evaporation on top of p-type Si substrates. Optical char
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::70b5e33725a31026b3a71e46707ea5e9
http://hdl.handle.net/2445/160757
http://hdl.handle.net/2445/160757
Publikováno v:
ECS Meeting Abstracts. :1158-1158
The fabrication of SiOx/SiO2 superlattices combined with thermal annealing enables the size and density control of Si quantum dots [1]. The layered-arranged Si nanocrystals represent a model system to systematically study the photonic and electronic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52caa5e8f37ea00afd2a7f9e37beb2a4
https://doi.org/10.1149/ma2018-01/16/1158
https://doi.org/10.1149/ma2018-01/16/1158