Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Julian J. McMorrow"'
Autor:
Mark C. Hersam, Cory D. Cress, Scott W. Schmucker, Rajan Kumar, Julian J. McMorrow, Kyle A. Luck, Kanan Puntambekar, Laila Jaber-Ansari, Heather N. Arnold, Tobin J. Marks, Vinod K. Sangwan
Publikováno v:
ACS Applied Materials & Interfaces. 8:5058-5064
Solution-processed semiconductor and dielectric materials are attractive for future lightweight, low-voltage, flexible electronics, but their response to ionizing radiation environments is not well understood. Here, we investigate the radiation respo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c3efa366aa7c2a2407b9cf3035a9349c
https://doi.org/10.1021/acsami.5b12259
https://doi.org/10.1021/acsami.5b12259
Autor:
Satyaprasad P. Senanayak, Mark C. Hersam, Vinod K. Sangwan, Tobin J. Marks, K. S. Narayan, Ken Everaerts, Zhihua Chen, Antonio Facchetti, Julian J. McMorrow
The development of high-performance multifunctional polymer-based electronic circuits is a major step towards future flexible electronics. Here, we demonstrate a tunable approach to fabricate such devices based on rationally designed dielectric super
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::81c774c8e4b889bff0bb9a5b7070c10e
Autor:
Tobin J. Marks, Deep Jariwala, Antonio Facchetti, Amanda R. Walker, Mark C. Hersam, Julian J. McMorrow, Vinod K. Sangwan, Ken Everaerts, Emily E. Hoffman
Publikováno v:
ACS Applied Materials & Interfaces. 7:26360-26366
The coupling of hybrid organic-inorganic gate dielectrics with emergent unconventional semiconductors has yielded transistor devices exhibiting record-setting transport properties. However, extensive electronic transport measurements on these high-ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::df70ab509c79749e31d7ba2735c13754
https://doi.org/10.1021/acsami.5b07744
https://doi.org/10.1021/acsami.5b07744
Autor:
William A. Gaviria Rojas, Tobin J. Marks, Cory D. Cress, Julian J. McMorrow, Mark C. Hersam, Michael L. Geier
Publikováno v:
ACS nano. 11(3)
Increasingly complex demonstrations of integrated circuit elements based on semiconducting single-walled carbon nanotubes (SWCNTs) mark the maturation of this technology for use in next-generation electronics. In particular, organic materials have re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b12c2aada99fc01599d35f5c76f5104e
https://pubmed.ncbi.nlm.nih.gov/28212000
https://pubmed.ncbi.nlm.nih.gov/28212000
Autor:
Julian J. McMorrow, Ivan Sanchez Esqueda, Cory D. Cress, Jeremy T. Robinson, Adam L. Friedman, James G. Champlain
Publikováno v:
IEEE Transactions on Nuclear Science. 59:3045-3053
We investigate total ionizing dose (TID) effects in graphene field effect transistors comprised of chemical vapor deposition grown graphene transferred onto trimethylsiloxy(TMS)-passivated SiO2 Si substrates. TID exposure with a positive gate bias in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2776fd7fbad8fd7cb8adaa1e16f141c
https://doi.org/10.1109/tns.2012.2221479
https://doi.org/10.1109/tns.2012.2221479
Autor:
Scott R. Messenger, Brian J. Landi, Jeremy T. Robinson, Julian J. McMorrow, Cory D. Cress, Seth M. Hubbard
Publikováno v:
Electronics, Vol 1, Iss 1, Pp 23-31 (2012)
Electronics
Volume 1
Issue 1
Pages: 23-31
Electronics
Volume 1
Issue 1
Pages: 23-31
We experimentally investigate the effects of Co-60 irradiation on the electrical properties of single-walled carbon nanotube and graphene field-effect transistors. We observe significant differences in the radiation response of devices depending on t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4b44e0b6e9ada3bca866306fcfc3fa12
http://www.mdpi.com/2079-9292/1/1/23
http://www.mdpi.com/2079-9292/1/1/23
Autor:
Brad D. Weaver, Julian J. McMorrow, Jeremy T. Robinson, Harold L. Hughes, Adam L. Friedman, Cory D. Cress, Brian J. Landi
Publikováno v:
MRS Communications. 1:27-31
We investigate the radiation response of single-walled carbon nanotube (SWCNT) thin-film transistors fabricated with 23 nm silicon oxynitride gate dielectric layers, fortotal ionizing doses (TIDs) of Co-60 gamma irradiation up to 2 Mrad(Si). Irradiat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5e73707b94a2a088b5cf4470e6f0561
https://doi.org/10.1557/mrc.2011.10
https://doi.org/10.1557/mrc.2011.10
Autor:
Xiaolong Liu, Jian Zhu, Wei Huang, Megan E. Beck, Mark C. Hersam, Julian J. McMorrow, Deep Jariwala, Michael L. Geier, Tobin J. Marks
Publikováno v:
Advanced materials (Deerfield Beach, Fla.). 28(1)
Layer-by-layer assembled 2D montmorillonite nanosheets are shown to be high-performance, solution-processed dielectrics. These scalable and spatially uniform sub-10 nm thick dielectrics yield high areal capacitances of ≈600 nF cm(-2) and low leakag
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::91d7319d6ae15489b10696aca4b430e1
https://pubmed.ncbi.nlm.nih.gov/26514248
https://pubmed.ncbi.nlm.nih.gov/26514248
Autor:
Weichao Xu, Tobin J. Marks, Michael L. Geier, Jian Zhu, Chris H. Kim, Julian J. McMorrow, Mark C. Hersam
Publikováno v:
Nature nanotechnology. 10(11)
Over the past two decades, extensive research on single-walled carbon nanotubes (SWCNTs) has elucidated their many extraordinary properties, making them one of the most promising candidates for solution-processable, high-performance integrated circui
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b28753dbffa5238e1aeb2a38a7f5e72d
https://pubmed.ncbi.nlm.nih.gov/26344184
https://pubmed.ncbi.nlm.nih.gov/26344184
Autor:
Gavin P. Campbell, Vinod K. Sangwan, Tobin J. Marks, Xiaolong Liu, Hadallia Bergeron, Itamar Balla, Michael J. Bedzyk, Mark C. Hersam, Julian J. McMorrow
Publikováno v:
Applied Physics Letters. 110:099901
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71ae808e8fe3c9aca283f1c5f4d976d7
https://doi.org/10.1063/1.4977519
https://doi.org/10.1063/1.4977519