Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Julian G. Fernandez"'
Autor:
Julian G. Fernandez, Guéric Etesse, Natalia Seoane, Enrique Comesaña, Kazuhiko Hirakawa, Antonio Garcia-Loureiro, Marc Bescond
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-14 (2024)
Abstract Cooling devices grounded in solid-state physics are promising candidates for integrated-chip nanocooling applications. These devices are modeled by coupling the quantum non-equilibirum Green’s function for electrons with the heat equation
Externí odkaz:
https://doaj.org/article/eee6914b372c4dd396559bd7ecdf44b4
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 953-959 (2022)
The impact of different variability sources on the transistor performance increases as devices are scaled-down, being the metal grain granularity (MGG) and the line edge roughness (LER) some of the major contributors to this increase. Variability stu
Externí odkaz:
https://doaj.org/article/d6ac326619d54c2d9944ce08c0e92601
Four sources of variability, metal grain granularity (MGG), line-edge roughness (LER), gate-edge roughness (GER), and random discrete dopants (RDD), affecting the performance of state-of-the-art FinFET, nanosheet (NS), and nanowire (NW) FETs, are ana
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1f95ecbf67caa3b2515971e75c2f2f5a
https://cronfa.swan.ac.uk/Record/cronfa58107/Download/58107__21060__c2f87dd8898f49f6b451eefae1b8a66f.pdf
https://cronfa.swan.ac.uk/Record/cronfa58107/Download/58107__21060__c2f87dd8898f49f6b451eefae1b8a66f.pdf
