Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Juli Cheng"'
Autor:
Chao-Yu Harvey Cheng, Juli Cheng, Wei-Jhe Tzai, Lanny Mihardja, Chun-Chi Yu, Chien-Jen Eros Huang, Houssam Chouaib, Shi-Ming Jeremy Wei, Howard Chen, Sungchul Yoo, Yu-Hao Huang, Ching-Hung Bert Lin, Zhi-Qing James Xu
Publikováno v:
SPIE Proceedings.
Scatterometry-based metrology measurements for advanced gate after-develop inspection (ADI) and after-etch inspection (AEI) structures have been well proven 1 . This paper discusses the metrology challenges encountered in implementing a production-wo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7061e6719b920cf4ee3265bf2f50a661
https://doi.org/10.1117/12.916234
https://doi.org/10.1117/12.916234
Autor:
Chao-Yu Harvey Cheng, Juli Cheng, Wu-Sian Sie, Houssam Chouaib, Qiong-Yan Yuan, Zhiming Jiang, Chih-Hsun Lin, Chia-Lin Hsu, Juan-Yuan Wu, Chien-Jen Eros Huang, Zhi-Qing James Xu, Ching-Hung Bert Lin, Sungchul Yoo, Climbing Huang
Publikováno v:
SPIE Proceedings.
At the 28nm node using 300mm wafers, oxide step height in STI CMP transient gate after-etch inspection (TG AEI) wafers is a critical parameter that affects device performance and should be monitored and controlled. For production process control of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e15505d1637a8936483c54bb255687f0
https://doi.org/10.1117/12.916235
https://doi.org/10.1117/12.916235
Autor:
Sheng-Min Chiu, Chin-Fu Lin, Yu-Ren Wang, Zhiming Jiang, Chao-Yu Cheng, Juli Cheng, Zhengquan Tan, Chien-Jen Huang, Getin Raphael, Tsuo-Wen Lu, Shao-Ju Chang, Juan-Yuan Wu, Tsai-Yu Wen
Publikováno v:
ECS Meeting Abstracts. :1802-1802
Ion implantation is a key process for front end of line semiconductor manufacturing and directly correlates to device performance. Inability to rework mandates precise control. As of today, there is still limited production worthy solution for in-lin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::87ed29b7a4014c24260549ffad1651be
https://doi.org/10.1149/ma2014-02/35/1802
https://doi.org/10.1149/ma2014-02/35/1802