Reduction of Schottky Barrier Height at Graphene/Germanium Interface with Surface Passivation

Autor: Jules Courtin, Alain Moréac, Gabriel Delhaye, Bruno Lépine, Sylvain Tricot, Pascal Turban, Philippe Schieffer, Jean-Christophe Le Breton

Publikováno v: Applied Sciences, Vol 9, Iss 23, p 5014 (2019)

Fermi level pinning at metal/semiconductor interfaces forbids a total control over the Schottky barrier height. 2D materials may be an interesting route to circumvent this problem. As they weakly interact with their substrate through Van der Waals fo

Externí odkaz: https://doaj.org/article/cc60f5b58895426ab69febcb66b88d90

Silicon Band Engineering with 2D materials

Autor: jules, courtin, Le Gall, Sylvain, Chrétien, Pascal, Delhaye, Gabriel, Turban, Pascal, Tricot, Sylvain, Lépine, Bruno, Schieffer, Philippe, Le Breton, Jean-Christophe

Publikováno v: 8th NIMS-UR1-CNRS-SG Workshop
8th NIMS-UR1-CNRS-SG Workshop, Nov 2019, Tsukuba, Japan

International audience

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::28b906b0b53c521e85c1ec8c0fcf93b2
https://hal.archives-ouvertes.fr/hal-02384509

A low Schottky barrier height and transport mechanism in gold-graphene-silicon (001) heterojunctions

Autor: Alain Moréac, Sylvain Tricot, Sylvain Le Gall, Pascal Turban, Pascal Chrétien, Bruno Lépine, Gabriel Delhaye, Jules Courtin, Jean-Christophe Le Breton, Philippe Schieffer

Publikováno v: Nanoscale Advances
Nanoscale Advances, RSC, 2019, 1 (9), pp.3372-3378. ⟨10.1039/C9NA00393B⟩
Nanoscale Advances, 2019, 1 (9), pp.3372-3378. ⟨10.1039/C9NA00393B⟩

International audience; The interface resistance at metal/semiconductor junctions has been a key issue for decades. The control of this resistance is dependent on the possibility to tune the Schottky barrier height. However, Fermi level pinning in th

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b570697264f5debc0289314b92c156cc
https://pubmed.ncbi.nlm.nih.gov/36133562

Reduction of Schottky Barrier Height at Graphene/Germanium Interface with Surface Passivation

Autor: Philippe Schieffer, Gabriel Delhaye, Sylvain Tricot, Bruno Lépine, Pascal Turban, Alain Moréac, Jules Courtin, Jean-Christophe Le Breton

Publikováno v: Applied Sciences
Applied Sciences, 2019, 9 (23), pp.5014. ⟨10.3390/app9235014⟩
Applied Sciences, Vol 9, Iss 23, p 5014 (2019)
Applied Sciences, MDPI, 2019, 9 (23), pp.5014. ⟨10.3390/app9235014⟩
Volume 9
Issue 23

International audience; Fermi level pinning at metal/semiconductor interfaces forbids a total control over the Schottky barrier height. 2D materials may be an interesting route to circumvent this problem. As they weakly interact with their substrate

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4712da6dc2c3ed7ab053a87ed222aa63
https://hal.science/hal-02384497

PhD in progress : Ingénierie d'interface du silicium par des matériaux 2D [Defense 14.12.2020]

Autor: Jules, Courtin

supervisor Philippe Schieffer department of materials - nanosciences)
sous la direction de Philippe Schieffer dans le département Matériaux-Nanosciences

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::3e2b348c64391ac18c4f185d4cf08c0a
https://hal.archives-ouvertes.fr/hal-02282981