Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Jui-Mei Hsu"'
Autor:
Shu-Fen Wu, Chia-Bin Chang, Jui-Mei Hsu, Ming-Chi Lu, Ning-Sheng Lai, Chin Li, Chien-Hsueh Tung
Publikováno v:
Arthritis Research & Therapy, Vol 19, Iss 1, Pp 1-14 (2017)
Abstract Background Overexpression of membranous CD154 in T lymphocytes has been found previously in systemic lupus erythematosus (SLE). Because hydroxychloroquine (HCQ) has been used frequently in the treatment of lupus, we sought to identify the ef
Externí odkaz:
https://doaj.org/article/5482f95b17cb4423a7109e8d1c88b93e
Autor:
Chien Hung Wu, Jui-Mei Hsu, Shui-Jinn Wang, Yu-Xin Zhang, Kow-Ming Chang, Bo Wen Huang, Yi-Ming Chen
Publikováno v:
Journal of Nanoscience and Nanotechnology. 18:2054-2057
Atmospheric pressure plasma-enhanced chemical vapor deposition (AP-PECVD) was employed for the fabrication of indium gallium zinc oxide thin-film transistors (IGZO TFTs) with high transparent gallium zinc oxide (GZO) source/drain electrodes. The infl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::36db807efa4379d15c25d7a67e04230b
https://doi.org/10.1166/jnn.2018.14977
https://doi.org/10.1166/jnn.2018.14977
Publikováno v:
Advanced Materials Research. 1119:471-474
In this paper, APPJ (Atmospheric pressure Pules arc Plasma Jet) is used to generate a DC pulse source depositing GZO thin film under atmospheric pressure. Thus, no vacuum chamber needed leads to the cost downward. With scanning operation, makes singl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff44670498d787d3ef6045b077b8af87
https://doi.org/10.4028/www.scientific.net/amr.1119.471
https://doi.org/10.4028/www.scientific.net/amr.1119.471
Autor:
Po-Ching Ho, Chia-Chiang Chang, Atthaporn Ariyarit, Chin-Jyi Wu, Jui-Mei Hsu, Kow-Ming Chang, Kuo-Hui Yang
Publikováno v:
Thin Solid Films. 548:460-464
article i nfo To enhance the light-trapping qualities of silicon thin-film solar cells, the use of transparent conductive oxide with high haze and high conductivity is essential. This study investigated an eco-friendly technique that used bi- layer G
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e65e3bede44f21216b157347f638b92
https://doi.org/10.1016/j.tsf.2013.09.082
https://doi.org/10.1016/j.tsf.2013.09.082
Autor:
Jui Mei Hsu, Kuo Hui Yang, Kow-Ming Chang, Chin Jyi Wu, Chia Chiang Chang, Po Ching Ho, Shu Hung Yu
Publikováno v:
Applied Surface Science. 276:756-760
One of the essential applications of transparent conductive oxides is as front electrodes for superstrate silicon thin-film solar cells. Textured TCO thin films can improve absorption of sunlight for an a-Si:H absorber during a single optical path. I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf370c401b3a9c5cfb481b23aa50304e
https://doi.org/10.1016/j.apsusc.2013.03.165
https://doi.org/10.1016/j.apsusc.2013.03.165
Autor:
Kow-Ming Chang, Bo-Wen Huang, Chien-Hung Wu, Yu-Xin Zhang, Yu-Hsuan Cheng, Yu-Li Lin, Chuang-Ju Lin, Hsin-Ying Chen, Shui-Jinn Wang, Ming-Chuan Lee, Jui-Mei Hsu, You-Xian Zheng
Publikováno v:
2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO).
Atmospheric pressure plasma-enhanced chemical vapor deposition (AP-PECVD) was applied for the fabrication of amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs). In this work, a-IGZO TFTs fabricated by AP-PECVD technique were firs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe5efc7b41c3f446348203162ca182ed
https://doi.org/10.1109/nano.2016.7751471
https://doi.org/10.1109/nano.2016.7751471
Autor:
Bo-Wen Huang, Hsin-Ying Chen, Chia-Yao Cheng, Yao-Jen Lee, Kow-Ming Chang, Jui-Mei Hsu, Jian-Hong Lin, Chien-Hung Wu
Publikováno v:
2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO).
In this paper, microwave assisted annealing (MWAA) technique on atmospheric pressure plasma-enhanced chemical vapor deposition (AP-PECVD) fabricated indium-gallium-zinc-oxide thin-film transistors (IGZO TFTs) is investigated for the first time. MWAA
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e5e5c0000bd3fe635894ae251963cf6
https://doi.org/10.1109/nano.2016.7751474
https://doi.org/10.1109/nano.2016.7751474
Publikováno v:
Journal of nanoscience and nanotechnology. 16(6)
The aim of this paper is to illustrate the N2 plasma treatment for high-κ ZrO2 gate dielectric stack (30 nm) with indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs). Experimental results reveal that a suitable incorporation of nitrogen at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f56c2f16e1dbe4dbaa9a0e833549e6b0
https://pubmed.ncbi.nlm.nih.gov/27427669
https://pubmed.ncbi.nlm.nih.gov/27427669
Publikováno v:
SPIE Proceedings.
A novel ultrasonic horn atomizer is developed for the purpose of obtaining small size droplets at a large flow rate. The ultrasonic horn has a non-monotonically decreasing cross sectional area to provide a large atomizing surface. Consisting of two h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::317d18dea04fa3e9cac4df6197b94c29
https://doi.org/10.1117/12.2219549
https://doi.org/10.1117/12.2219549
Publikováno v:
IEEE transactions on bio-medical engineering. 56(1)
Electronic neural interfaces have been developed to restore function to the nervous system for patients with neural disorders. A conformal and chronically stable dielectric encapsulation is required to protect the neural interface device from the har
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6f0d09258457e5d3967b87626afdff32
https://pubmed.ncbi.nlm.nih.gov/19224715
https://pubmed.ncbi.nlm.nih.gov/19224715