Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Jui-Jen Wu"'
Autor:
Jui-jen Wu, 吳瑞仁
100
“The mortgage life insurance”is a new product of the insurance commodity markets. The general population,is lack of its understanding,but also the consumer objects is only limited to the bank`s housing loans to households, that would be
“The mortgage life insurance”is a new product of the insurance commodity markets. The general population,is lack of its understanding,but also the consumer objects is only limited to the bank`s housing loans to households, that would be
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/11690411041566811703
Autor:
Jui-Jen Wu, 吳瑞仁
93
This thesis proposed a design of 1-V 2.4-GHz low-IF architecture receiver front-end circuit. It is suitable for battery-based communication equipments or bluetooth application. The goal of this design is to realize a simple, low cost, low vol
This thesis proposed a design of 1-V 2.4-GHz low-IF architecture receiver front-end circuit. It is suitable for battery-based communication equipments or bluetooth application. The goal of this design is to realize a simple, low cost, low vol
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/40804418825797298780
Autor:
Hung-Li Chiang, Jui-Jen Wu, Chen-Han Chou, Yen-Fu Hsiao, Yi-Chun Chen, Leo Liu, Jer-Fu Wang, Tzu-Chiang Chen, Pei-Jun Liao, Jin Cai, Xinyu Bao, Alan Cheng, Meng-Fan Chang
Publikováno v:
2021 IEEE International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae6cdc69da21349321454051d1b8e67a
https://doi.org/10.1109/iedm19574.2021.9720573
https://doi.org/10.1109/iedm19574.2021.9720573
Autor:
Jih Jung Chen, Hsiang Ruei Liao, Yun-Ping Lim, Lin Yang Cheng, Ping-Jyun Sung, Yueh-Hsiung Kuo, Chih-Wen Shu, Ming Chi Hung, Wen Lung Kuo, Sin Ling Wang, Jui Jen Wu
Publikováno v:
Chemistry of Natural Compounds. 53:649-652
A new xanthone, garcisubellone (1), has been isolated from the roots of Garcinia subelliptica, together with three known compounds, subelliptenone E (2), 1,5-dihydroxy-3-methoxyxanthone (3), and 1,4,5-trihydroxyxanthone (4). The structure of the new
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90c658ab13014be0eb136408d17a1400
https://doi.org/10.1007/s10600-017-2082-4
https://doi.org/10.1007/s10600-017-2082-4
Autor:
Jui-Jen Wu, Peter Xu, Mingliang Liao, Sheng-Tsai Huang, Siyu Nie, Fan-yi Jien, Chuancong Xiao, Gangpeng Zhang, Eric Tsou, Junhua Zheng, Frank Gao
Publikováno v:
2019 China Semiconductor Technology International Conference (CSTIC).
A 1Mb Serial EEPROM compatible non-volatile memory (NVM) with phase change memory (PCM) device has been developed in 40nm CMOS technology. The storage element PCM device was integrated and fabricated by AMS Fab (Jiangsu Advanced Memory Semiconductor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b37b02dbedfde4c9fbecb7e07e8b8b51
https://doi.org/10.1109/cstic.2019.8755611
https://doi.org/10.1109/cstic.2019.8755611
Autor:
Meng-Fan Chang, Chrong Jung Lin, Ting-Chin Yang, Ya-Chin King, Ku-Feng Lin, Tun-Fei Chien, Wen-Chao Shen, Yu-Der Chih, Yen-Chen Liu, Jonathan Chang, Jui-Jen Wu
Publikováno v:
IEEE Journal of Solid-State Circuits. 50:2786-2795
The designs of resistive RAM (ReRAM) macros are limited by 1) a small sensing margin, limited read- ${\rm VDDmin}$ , and slow read access time ( $T _{\rm AC}$ ) caused by a high cell-resistance and small cell-resistance-ratio (R-ratio) and 2) poor po
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f38268872f1f120601bfc045fc365d2f
https://doi.org/10.1109/jssc.2015.2472601
https://doi.org/10.1109/jssc.2015.2472601
Autor:
Yu-Fan Lin, Meng-Fan Chang, Yen-Chen Liu, Yu-Der Chih, Jui-Jen Wu, Shin-Jang Shen, Wu-Chin Tsai
Publikováno v:
IEEE Journal of Solid-State Circuits. 50:2188-2198
Current-mode sense amplifiers (CSA) are commonly used in eNVM, because of their fast read speed at large bitline (BL) loads and small cell read currents. However, conventional CSAs are unable to achieve fast random read access time $(T_{\rm AC})$ , d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35a189289287f20e75049ea160ab9e25
https://doi.org/10.1109/jssc.2015.2424972
https://doi.org/10.1109/jssc.2015.2424972
Autor:
Shyh-Shyuan Sheu, Ming-Jinn Tsai, Yue-Der Chih, Jui-Jen Wu, Ya-Chin King, Meng-Fan Chang, Frederick T. Chen, Chia-Chen Kuo, Tzu-Kun Ku, Chorng-Jung Lin
Publikováno v:
IEEE Journal of Solid-State Circuits. 49:908-916
The design of resistive RAM (ReRAM) faces two major challenges: 1) cell area versus write current requirements and 2) cell read current (ICELL) versus read disturbance. This paper proposes ReRAM macros using logic-process-based vertical parasitic-BJT
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a758ca387158944e350cf67886ce0f7
https://doi.org/10.1109/jssc.2013.2297417
https://doi.org/10.1109/jssc.2013.2297417
Autor:
Lai-Fu Chen, Wen-Ching Wu, Tzu-Yi Yang, Shu-Meng Yang, Meng-Fan Chang, Jui-Jen Wu, Ming-Pin Chen, Yao-Jen Kuo, Yuan-Hua Chu, Hiroyuki Yamauchi, Hsiu-Yun Su
Publikováno v:
IEEE Journal of Solid-State Circuits. 48:2558-2569
In previous SRAM designs, reducing minimum operating voltage (VDDmin) inevitably resulted in devices with a large cell area (A). This work proposes an L-shaped 7T cell (L7T) and read-bitline (RBL) swing expansion scheme (RBL-EXPD) to minimize A*VDDmi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9978c4ba88dce14cb34056323d08fc2d
https://doi.org/10.1109/jssc.2013.2273835
https://doi.org/10.1109/jssc.2013.2273835
Publikováno v:
IEEE Transactions on Circuits and Systems II: Express Briefs. 59:790-794
Eight-transistor (8T) dual-port static random access memory (DP-SRAM) suffers from read and write disturbances at low voltages when both ports are accessed simultaneously, and write disturbance dominates the VDDmin in high-speed applications. This br
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3caa366f35b09a8505e00e3b7b021313
https://doi.org/10.1109/tcsii.2012.2228398
https://doi.org/10.1109/tcsii.2012.2228398