Zobrazeno 1 - 10
of 34
pro vyhledávání: '"Juhyuk Park"'
Autor:
Woo Jin Baek, Juhyuk Park, Joonsup Shim, Bong Ho Kim, Seongchong Park, Hyun Soo Kim, Dae-Myeong Geum, Sang Hyeon Kim
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-11 (2023)
The size-dependent efficiency degradation issues of micro-light-emitting diodes are obstacles for efficient microdisplays development. Here, Baek et al. demonstrate an epitaxial engineering strategy to alleviate the efficiency degradations and achiev
Externí odkaz:
https://doaj.org/article/d77482a889c64c9b986d57cf6fb69ca2
Publikováno v:
Nanoscale Research Letters, Vol 17, Iss 1, Pp 1-9 (2022)
Abstract The passivation effects of sulfur treatment and Al2O3 passivation for AlGaInP/GaInP red micro-light-emitting-diodes (LEDs) were investigated in terms of the external quantum efficiency (EQE) and the current density showing the peak EQE (J EQ
Externí odkaz:
https://doaj.org/article/f90903eaa0ae4ae3b8f4c95a13d85731
Autor:
Taewon Jin, Sanghyeon Kim, Jae-Hoon Han, Dae-Hwan Ahn, Seong Ui An, Tae Hyeon Noh, Xinkai Sun, Cheol Jun Kim, Juhyuk Park, Younghyun Kim
Publikováno v:
Nanoscale Advances. 5:1316-1322
We demonstrate the programmable light intensity of a micro-LED by compensating threshold voltage variability of thin-film transistors by introducing a non-volatile programmable ferroelectric material, HfZrO2 into the gate stack of the TFT.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a49d63f86d32acd61b0fd062512aa66
https://doi.org/10.1039/d2na00713d
https://doi.org/10.1039/d2na00713d
Autor:
Juhyuk Park, Ji Wang, Guan, Webster, Gjesteby, Lars A., Pollack, Dylan, Kamentsky, Lee, Evans, Nicholas B., Stirman, Jeff, Xinyi Gu, Chuanxi Zhao, Marx, Slayton, Kim, Minyoung E., Seo Woo Choi, Snyder, Michael, Chavez, David, Su-Arcaro, Clover, Yuxuan Tian, Chang Sin Park, Qiangge Zhang, Dae Hee Yun
Publikováno v:
Science. 6/14/2024, Vol. 384 Issue 6701, p1188-1188. 1p. 1 Graph.
Publikováno v:
SID Symposium Digest of Technical Papers. 53:545-548
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51e6084a98c388d7df65b42951152032
https://doi.org/10.1002/sdtp.15545
https://doi.org/10.1002/sdtp.15545
Autor:
Jinha Lim, Joonsup Shim, Inki Kim, Seong Kwang Kim, Hyeongrak Lim, Seung-Yeop Ahn, Juhyuk Park, Dae-Myeong Geum, SangHyeon Kim
Publikováno v:
2022 International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e0eda7a5fab40b8fc1c0f9ab2a82f04
https://doi.org/10.1109/iedm45625.2022.10019351
https://doi.org/10.1109/iedm45625.2022.10019351
Autor:
Benjamin Fenelon, Lars A. Gjesteby, Webster Guan, Juhyuk Park, Kwanghun Chung, Laura J. Brattain
Publikováno v:
2022 IEEE High Performance Extreme Computing Conference (HPEC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3bd3e660285957d03623ce7a26db63a4
https://doi.org/10.1109/hpec55821.2022.9926403
https://doi.org/10.1109/hpec55821.2022.9926403
Autor:
Dae-Myeong Geum, Won Jun Choi, Jaeyong Jeong, Hyeong-Rak Lim, Sanghyeon Kim, Seong Kwang Kim, Hyo-Jin Kim, Juhyuk Park, Jae-Hoon Han
Publikováno v:
IEEE Electron Device Letters. 42:800-803
We systematically investigated the wafer- bonded interfaces of p+GaAs/n+InGaAs and p+InGaAs/ n+InGaAs by using a circular transmission line method (CTLM) for the increased extraction accuracy. Based on the low-temperature bonding process at 50 °C, t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1cb16992c4bae1b710506c6eb8639bcc
https://doi.org/10.1109/led.2021.3076817
https://doi.org/10.1109/led.2021.3076817
Publikováno v:
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f4823c4aa698641d5d3b5e3d0c4325c
https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830425
https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830425
Autor:
Dae-Myeong Geum, Jinha Lim, Junho Jang, Seungyeop Ahn, SeongKwang Kim, Joonsup Shim, Bong Ho Kim, Juhyuk Park, Woo Jin Baek, Jaeyong Jeong, Sanghyeon Kim
Publikováno v:
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8eb5242447f7a9f207677cc5b9218d84
https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830388
https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830388