Zobrazeno 1 - 10
of 62
pro vyhledávání: '"Juhee Jeon"'
Autor:
Yukyeng Byeon, Chaejin Lee, Juhee Jeon, Gung Ju Kim, Sangjoon Chong, Young-Hoon Kim, Young Hyun Cho, Seok Ho Hong, Chang-Ki Hong, Jeong Hoon Kim, Sang Woo Song
Publikováno v:
Discover Oncology, Vol 15, Iss 1, Pp 1-13 (2024)
Abstract Purpose Oligodendrogliomas (ODGs) are a subtype of diffuse lower-grade gliomas with overall survival of > 10 years. This study aims to analyze long-term outcomes and identify prognostic factors in patients with WHO grade 2 ODG. Methods We re
Externí odkaz:
https://doaj.org/article/133a960c3258486e870e5b833b32a51a
Autor:
Chaejin Lee, Yukyeng Byeon, Gung Ju Kim, Juhee Jeon, Chang Ki Hong, Jeong Hoon Kim, Young-Hoon Kim, Young Hyun Cho, Seok Ho Hong, Sang Joon Chong, Sang Woo Song
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-10 (2024)
Abstract Pleomorphic xanthoastrocytomas (PXA) are rare, accounting for
Externí odkaz:
https://doaj.org/article/6ec6588076974e62888b10941085533a
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 7, Pp n/a-n/a (2024)
Abstract In‐memory computing significantly reduces workload and energy cost of data access in the traditional von Neumann computing architecture. Using various memristors, stateful logic is developed to realize in‐memory computing. However, memri
Externí odkaz:
https://doaj.org/article/93b9535a7c8c4f7ebc1d366e3fe1c01e
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 6, Pp n/a-n/a (2024)
Abstract In this study, a triple‐gated transistor with a p+‐i‐n+ silicon nanosheet (NS) is proposed as a single synaptic device, and bidirectional synaptic functions are realized using reconfigurable memory characteristics. The triple‐gated N
Externí odkaz:
https://doaj.org/article/026a68a38ea34ba6b3cb8521216c3de1
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 12, Pp n/a-n/a (2023)
Abstract A reconfigurable logic‐in‐memory (R‐LIM) cell performs logic‐in‐memory functions as well as reconfigurable logic gates. The R‐LIM cell is constructed with triple‐gated (TG) feedback field‐effect transistors (FBFETs) that are
Externí odkaz:
https://doaj.org/article/9b4faefd5cc7441489987cca8d733d54
Publikováno v:
Nanomaterials, Vol 14, Iss 7, p 562 (2024)
In this study, we demonstrate the generation and storage of random voltage values using a ring oscillator consisting of feedback field-effect transistors (FBFETs). This innovative approach utilizes the logic-in-memory function of FBFETs to extract co
Externí odkaz:
https://doaj.org/article/951c584146f84bb5b812ca44c2465823
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 8, Pp n/a-n/a (2023)
Abstract The reconfigurable feedback field‐effect transistors (R‐FBFETs) with a double‐gated structure are designed and the logic and memory operations of a logic‐in‐memory (LIM) inverter comprising two R‐FBFETs are investigated. The R‐
Externí odkaz:
https://doaj.org/article/ef36d22589e746778440ecd6ee7b3f95
Publikováno v:
IEEE Access, Vol 11, Pp 54692-54698 (2023)
In this study, we examine the effect of interface trap states on the electrical characteristics of single-gated feedback field-effect transistors (FBFETs) using a commercially available computer-aided design simulation package. Interface trap states
Externí odkaz:
https://doaj.org/article/a8706130dd8c47d88935013e9d5f6bb9
Autor:
Han Eol Jeong, Sungho Bea, Dongwon Yoon, Juhong Jung, Seung-Mok Park, Juhee Jeon, Young-Min Ye, Jae-Hyun Lee, Ju-Young Shin
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-9 (2022)
Abstract Upon withdrawal of propacetamol, an injectable formulation of the paracetamol prodrug, in Europe due to safety concerns, South Korea’s regulatory body requested a post-marketing surveillance study exploring its safety profile. We character
Externí odkaz:
https://doaj.org/article/bbfd4e5c4f8346c79d049d1e0bffee8b
Publikováno v:
Nanomaterials, Vol 14, Iss 2, p 210 (2024)
In this study, the read operation of feedback field-effect transistors (FBFETs) with quasi-nonvolatile memory states was analyzed using a device simulator. For FBFETs, write pulses of 40 ns formed potential barriers in their channels, and charge carr
Externí odkaz:
https://doaj.org/article/394c5a4dfc994ee785ef4196679a78df