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pro vyhledávání: '"Juergen Uschmann"'
Autor:
Klaus Thonke, Markus Hepp, Juergen Uschmann, Rolf Sauer, Hartmut Presting, Wolfgang A. Cabanski, Milan Jaros, Horst Kibbel
Publikováno v:
SPIE Proceedings.
Highly p-doped Si1-xGex quantum well (QW) layers have been grown by molecular beam epitaxy (MBE) on silicon (Si) for detectors in the mid-infrared regime (3 (mu) - 5 (mu) , 8 (mu) - 12 (mu) ). The 5 nm - 10 nm thick SiGe QW layers were boron doped up
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::065c9da56bfcf7a858ddb9ea9dc145ba
https://doi.org/10.1117/12.280399
https://doi.org/10.1117/12.280399
