Zobrazeno 1 - 10
of 77
pro vyhledávání: '"Juergen Schubert"'
Autor:
Jürgen Schubert, Michael Ecke
Durch die rasante Entwicklung bildgebender Verfahren in der Pneumologie und der Möglichkeit einer sehr sensitiven Gewinnung zytologischen Untersuchungsmaterials, hat sich die qualitative wie quantitative Anforderung an zytologische Untersuchungen we
Autor:
Qing-Tai Zhao, Qinghua Han, Paulus Aleksa, Siegfried Mantl, Juergen Schubert, Thomas Carl Ulrich Tromm
Publikováno v:
Solid-State Electronics. 159:71-76
Steep slope negative capacitance MOSFETs with HfYOx ferroelectric on FDSOI were experimentally demonstrated. An average SS of 30 mV/dec was achieved over 3 decades of drain current. The negative capacitance is believed to be a transient phenomenon be
Autor:
Annika, Stellhorn, Anirban, Sarkar, Emmanuel, Kentzinger, Juri, Barthel, DI BERNARDO, Angelo, Shibabrata, Nandi, Paul, Zakalek, Juergen, Schubert, Thomas, Brueckel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3666::984b934ada8f3581354928a0e56b2e93
https://hdl.handle.net/11386/4825834
https://hdl.handle.net/11386/4825834
Autor:
Thomas Carl Ulrich Tromm, Siegfried Mantl, Paulus Aleksa, Juergen Schubert, Michael J. Hoffmann, Qing-Tai Zhao, Qinghua Han, Uwe Schroeder
Publikováno v:
IEEE Transactions on Electron Devices. 65:4641-4645
The subthreshold behavior of floating-gate MOSFETs connected with ferroelectric capacitors (FeCs) was investigated experimentally and theoretically. We found that the subthreshold swing (SS) decreases with decreasing ferroelectric capacitance (i.e.,
Publikováno v:
2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).
Ferroelectric polarization switching shows various effects on the performance of metal-ferroelectric-metal-insulator (MFMIS) FETs and metal-ferroelectric-insulator-semiconductor (MFIS) FETs. In a MFMIS FET, polarization switching causes a sudden char
Publikováno v:
2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS).
Steep slope negative capacitance MOSFETs with HfYOx ferroelectric on FDSOI were experimentally demonstrated. An average SS of 30 mV/dec was achieved over 3 decades of drain current. We found that the subthermal SS degrades with the sweeping numbers,
Publikováno v:
Physical review / B 98(11), 115113 (2018). doi:10.1103/PhysRevB.98.115113
Perovskite $\mathrm{SrIr}{\mathrm{O}}_{3}$ (SIO) films epitaxially deposited with a thickness of about 60 nm on various substrate materials display a nearly strain-relieved state. Films grown on orthorhombic (110) $\mathrm{DySc}{\mathrm{O}}_{3}$ (DSO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ec2afe78572ca1980729a9c78fc6aa8a
Autor:
Jürgen Schubert
Durch die rasante Entwicklung bildgebender Verfahren in der Gastroenterologie und der damit verbundenen Möglichkeit einer sehr sensitiven Gewinnung zytologischen Untersuchungsmaterials, hat sich die qualitative wie quantitative Anforderung an zytolo
Autor:
Arshak Poghossian, Willi Zander, Matthias Bäcker, Sebastian Schusser, Juergen Schubert, V.V. Buniatyan, Michael J. Schöning, Norayr Martirosyan, Iman Kerroumi, Christina Huck, Patrick Wagner
Publikováno v:
Electroanalysis. 26:980-987
It is well known that biochemical and biotech- nological processes are strongly dependent and affected by a variety of physico-chemical parameters such as pH value, temperature, pressure and electrolyte conductivity. Therefore, these quantities have
Autor:
Matthias Bäcker, V.V. Buniatyan, S. Reisert, Juergen Schubert, Christina Huck, Willi Zander, V.K. Begoyan, Michael J. Schöning, Arshak Poghossian
Publikováno v:
Procedia Engineering. 87:28-31
High- k perovskite oxide of barium strontium titanate (BST) represents a very attractive multi-functional transducer material for the development of (bio-)chemical sensors for liquids. In this work, BST films have been applied as a sensitive transduc