Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Juergen Leib"'
Autor:
Stefan Zeltner, Gudrun Rattmann, Zechun Yu, Christoph Friedrich Bayer, Juergen Leib, Lothar Frey, Norman Boettcher, Tobias Erlbacher, Andreas Schletz
Publikováno v:
2018 7th Electronic System-Integration Technology Conference (ESTC).
Point of load (PoL) converters are emerging as common solution for industrial applications, telecommunications, server, and aerospace. In this work, a topology is designed for a single stage 48 V to 1 V PoL converter by using new gallium nitride (GaN
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::949ceab7afd0004c3831730d32ecec05
https://doi.org/10.1109/estc.2018.8546362
https://doi.org/10.1109/estc.2018.8546362
Autor:
Daniel Studzinski, Ulli Hansen, Kwong-Loon Yam, Kok-Kheong Looi, Dzafir Shariff, Ralph Wilke, Juergen Leib, Volker Seidemann, Ha-Duong Ngo, Kenneth Tan, Florian Bieck, Nathapong Suthiwongsunthorn, Michael Topper
Publikováno v:
IEEE Transactions on Advanced Packaging. 33:713-721
Through-silicon-via (TSV) interconnects using the "via-last" approach are successfully applied for wafer-level packaging of complementary metal-oxide-semiconductor (CMOS) image sensors. Standard materials and processes are applied for redistribution
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5afa918cad213eb4bfe1b888e510f55e
https://doi.org/10.1109/tadvp.2009.2026950
https://doi.org/10.1109/tadvp.2009.2026950
Publikováno v:
Procedia Chemistry. 1(1):76-79
The use of a plasma-assisted e-beam evaporation process enables a cost-efficient exploitation of the outstanding material properties of borosilicate glass – a chemically very inert material with minimal moisture absorption, excellent optical proper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cb2915cb7e1954abe6a55ab39a43320a
Autor:
Karin Hauck, Simon Maus, Juergen Leib, Ivan Ndip, Michael Toepper, Oliver Gyenge, Ulli Hansen
Publikováno v:
2011 IEEE 61st Electronic Components and Technology Conference (ECTC).
A novel approach on wafer-level passivation of power devices using a thin, hermetic borosilicate glass layer as passivation or dielectric layer is presented here. The technology will be benchmarked to those conventional technologies. The glass layer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4dbbb864b4b2480ab307aa752f9d4f3
https://doi.org/10.1109/ectc.2011.5898522
https://doi.org/10.1109/ectc.2011.5898522
Autor:
Simon Maus, Juergen Leib, Kai Zoschke, Karin Hauck, Oliver Gyenge, Ulli Hansen, Michael Toepper
Publikováno v:
2011 IEEE 61st Electronic Components and Technology Conference (ECTC).
A novel process flow to manufacture miniaturized optical windows on wafer-level is presented. Those windows can be used for miniaturized optical products like high-brightness LEDs (HB-LED) and digital projection (DLP) as well as more complex optical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::593bee77d34525a1b13fdf1a137aeddf
https://doi.org/10.1109/ectc.2011.5898732
https://doi.org/10.1109/ectc.2011.5898732
Autor:
Karin Hauck, Michael Toepper, Juergen Leib, Holger Feindt, Ulli Hansen, Kai Zoschke, Simon Maus
Publikováno v:
3rd Electronics System Integration Technology Conference ESTC.
The use of borosilicate glass for anodic wafer bonding to silicon is well established in industry. In this paper we present a matured approach, where a microstructured borosilicate glass thin-film instead of a bulk glass wafer is used as anodic bond
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b49750661e2dafb28d35730d1d86ed52
https://doi.org/10.1109/estc.2010.5642923
https://doi.org/10.1109/estc.2010.5642923
Publikováno v:
3rd Electronics System Integration Technology Conference ESTC.
The novel wafer-level packaging (WLP) process invented allows hermetic capping of optical devices on wafer-level yielding miniaturized glass cavity windows on top of the optical area, at the same time leaving the contact area accessible for standard
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::422160eee36f2cc76d60f3b7a7e9309c
https://doi.org/10.1109/estc.2010.5642987
https://doi.org/10.1109/estc.2010.5642987
Autor:
Oliver Gyenge, Kai Zoschke, Michael Toepper, Simon Maus, Thorsten Fischer, Ulli Hansen, Juergen Leib
Publikováno v:
2009 59th Electronic Components and Technology Conference.
A novel approach on wafer-level passivation using a thin, hermetic borosilicate glass layer replacing the polymers in redistribution is presented here. The technology will be benchmarked to those conventional technologies. The glass layer is deposite
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2433d4c9d5ac38daf117331ff50be670
https://doi.org/10.1109/ectc.2009.5074117
https://doi.org/10.1109/ectc.2009.5074117
Autor:
V. Seidemann, Simon Maus, Oliver Gyenge, Juergen Leib, R. Wilke, K. Espertshuber, Ulli Hansen, D. Mund, T. Heuser
Publikováno v:
2007 Proceedings 57th Electronic Components and Technology Conference.
The novel wafer-level packaging (WLP) process described in this paper allows quasi-hermetic capping of optical devices on wafer-level yielding miniaturized glass cavity windows on top of the optical area, at the same time leaving the contact area acc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::adf3469474187f55c656671bfcd0ca22
https://doi.org/10.1109/ectc.2007.373857
https://doi.org/10.1109/ectc.2007.373857
Publikováno v:
2007 Proceedings 57th Electronic Components and Technology Conference.
The wafer level packaging for optical image sensor devices developed by Schott Advanced Packaging utilizes a through silicon via (TSV) by contacting the bond pads of the image sensors from the backside. Direct contact of the bond pads from the back s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::767a511f4b6dd19168bbe115b2c0b63d
https://doi.org/10.1109/ectc.2007.373899
https://doi.org/10.1109/ectc.2007.373899