Zobrazeno 1 - 10
of 57
pro vyhledávání: '"Juergen Carstensen"'
Self-Organized Growth of Crystallographic Macropores in Multicrystalline Zn by Nanoscale Sculpturing
Publikováno v:
Journal of The Electrochemical Society. 165:H3099-H3106
Publikováno v:
Nanoscale Horizons. 1:467-472
Surfaces are the crucial and limiting factor in nearly all metal applications, especially when technologically relevant alloys are employed. Insufficient surface properties on the nano- and microscale of metals determine, e.g. metal-polymer composite
Publikováno v:
Journal of The Electrochemical Society. 159:A1941-A1948
). It consists only of the active material(InP) and a thin Au layer as a current collector. The maximum possible capacity of InP (∼800 mAh/g) is achieved, which is muchhigherthanthecapacityofcommercialgraphiteanodes(∼350mAh/g).Thetotalanodecapaci
Publikováno v:
Electrochimica Acta. 55:327-339
Anodically dissolving semiconductor electrodes such as Si, Ge, GaAs, InP, or GaP exhibit a number of self-organization phenomena such as current oscillations in time and/or in space; some phenomena of this kind are also found during the anodic format
Autor:
Helmut Foell, Juergen Carstensen
Publikováno v:
ECS Transactions. 25:11-23
Impedance spectroscopy (IS) essentially measures the current or voltage response of a complex system to small perturbations of the applied voltage or current, respectively. Multi-mode FFT IS as in-troduced here includes responses to (possibly local)
Publikováno v:
physica status solidi (a). 205:2485-2503
A systematic approach for the application of fast Fourier transform (FFT) impedance spectroscopy to semiconductor photo-electrochemistry is given. In particular, photo-impedance spectroscopy in two novel modes is used in conjunction with conventional
Publikováno v:
physica status solidi c. 4:1883-1887
The current burst model (CBM) has been extended to include more complex oscillatory phenomena of the Si electrode in aqueous HF. In particular it accounts for additional effects inherent to the voltage oscillations, i.e. capacitive effects, very smal
Publikováno v:
physica status solidi (a). 204:1388-1393
Deep straight macropores in n-type Si have been completely filled with copper (Cu). Homogeneous metal deposition inside the deep pores was achieved by means of electroplating using a solution containing only CuS0 4 mixed with H 2 SO 4 and an optimize
Publikováno v:
physica status solidi (a). 204:1378-1382
Fast Fourier transform impedance electrochemical spectroscopy (FFT EIS) and photoelectrochemical impedance spectroscopy (FFT-PEIS) have been used for the first time to characterize in-situ the dynamics of macropore growth in n-type Si under backside
Publikováno v:
physica status solidi (a). 204:1292-1296
While electrochemical pore etching in semiconductors has become a thriving field for research (and applications) in the past 15 years or so, little work has been done in Ge. Besides Si, Ge is the only semiconductor with a diffusion length large enoug