Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Jue-Hsien Chern"'
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 6:297-305
The SPEC system for capturing and managing semiconductor fabrication process information is discussed. The SPEC data model decomposes process specifications into equipment, step, process, and flow hierarchies. Mechanisms within an interactive graphic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9603ec1a1c12ff5192b0f43c6891b00c
https://doi.org/10.1109/66.267639
https://doi.org/10.1109/66.267639
Publikováno v:
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 12:1726-1733
Algorithms for transient mixed-level circuit and device simulation using a full two-carrier three-dimensional (3-D) device simulator SIERRA and the circuit simulator SPICE3 are presented. Circuit and device simulator coupling algorithms that are suit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c84a939c589b1ae203e07ebe2f6630da
https://doi.org/10.1109/43.248083
https://doi.org/10.1109/43.248083
Autor:
R. Rutenbar, C. Sodini, Jue-Hsien Chern, E. Naviasky, D. Saias, Shekhar Borkar, Robert W. Brodersen, Georges Gielen
Publikováno v:
DAC
This panel discusses the following topics. With the ongoing trend towards more and more digitization in applications ranging from multimedia to telecommunications, there is a big debate about whether there will remain a need for analog circuits in sc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0d069da0b23cbb0f7c26c58f4819544f
https://doi.org/10.1145/1146909.1147089
https://doi.org/10.1145/1146909.1147089
Publikováno v:
Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4f83cb9b32082ebff6fb5f3368d530e
https://doi.org/10.1109/nupad.1990.748262
https://doi.org/10.1109/nupad.1990.748262
Publikováno v:
ICCAD
Two techniques for general circuit simulation, an intelligent, partial Gauss-Seidel scheme (PGS) and a preconditioned conjugate-gradient scheme (PLUCGS), are described. Both techniques are robust and accurate for bipolar and MOS analog and digital ci
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3083052955d8e580933746ef96dbc00a
https://doi.org/10.1109/iccad.1989.76980
https://doi.org/10.1109/iccad.1989.76980
Autor:
Jue-Hsien Chern, Mi-Chang Chang
Publikováno v:
1993 International Symposium on VLSI Technology, Systems, and Applications Proceedings of Technical Papers.
The problems of prematured snapback and false multiple breakdown are found in simulating semiconductor devices in the high temperature region. The only way to achieve accurate and efficient electrothermal simulation under these conditions is by adapt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3df8d18edc87bedb3817cc43ce2f1193
https://doi.org/10.1109/vtsa.1993.263646
https://doi.org/10.1109/vtsa.1993.263646
Publikováno v:
ICCAD
The authors describe algorithms for transient mixed-level circuit and device simulation using a two-carrier three-dimensional device simulator SIERRA and the circuit simulator SPICE3. It is pointed out that algorithms well suited to 2D mixed-level ci
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22d82453421330c4200129a0142e51ad
https://doi.org/10.1109/iccad.1991.185206
https://doi.org/10.1109/iccad.1991.185206
Publikováno v:
International Electron Devices Meeting 1991 [Technical Digest].
Two- and three-dimensional simulators have been developed to investigate the electrothermal operation of semiconductor devices and conditions for onset of thermally activated second breakdown. There are two distinct breakdown modes, one associated wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7544b6f7c9be1c738d6b8684c780aa60
https://doi.org/10.1109/iedm.1991.235278
https://doi.org/10.1109/iedm.1991.235278
Publikováno v:
ICCAD
The authors present a general purpose, parallel matrix solver based on the conjugate gradient squared (CGS) method which features a novel preconditioning scheme commensurate with massive parallel computing. The solver algorithm has been successfully
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a561c79805892fe9393659cbcefd0628
https://doi.org/10.1109/iccad.1990.129949
https://doi.org/10.1109/iccad.1990.129949