Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Judy W. Chow"'
Autor:
Steven D. Marcus, Daniel F. Downey, Wilfried Lerch, M. Glück, N. A. Stolwijk, H. Walk, Judy W. Chow, M. Schäffer
Publikováno v:
Journal of The Electrochemical Society. 146:2670-2678
For the formation of ultrashallow junctions, a controlled gaseous ambient during rapid thermal annealing is indispensible. To understand the diffusion/activation mechanism, the influencing and depending variables have to be clarified precisely. Ion i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99014c5cac930bb4bb4f6a2fe82eb628
https://doi.org/10.1149/1.1391990
https://doi.org/10.1149/1.1391990
Publikováno v:
Journal of Electronic Materials. 27:1291-1295
Ion implants of 2.0 and 5.0 keV 11B+ and 2.2, 5.0, and 8.9 keV 49BF2+ at a dose of 1E15/cm2 were investigated. Anneal conditions were developed which produced highly activated yet shallow junctions. The effects of oxygen were studied previously by us
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::198d8ccc8681304f4877fa1496152507
https://doi.org/10.1007/s11664-998-0088-1
https://doi.org/10.1007/s11664-998-0088-1
Publikováno v:
Journal of Electronic Materials. 27:1296-1314
The effects of time, temperature, ramp-up, and ramp-down rates with rapid thermal annealing employing a STEAG AST SHS3000 were investigated on 1.0 and 2.0 keV 11B+, 2.2, 5.0, and 8.9 keV 49BF 2 + , and 2 KeV 75As+, 1E15/cm2 samples implanted in a Var
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a286724fa14c06742bb8c02d56d6004e
https://doi.org/10.1007/s11664-998-0089-0
https://doi.org/10.1007/s11664-998-0089-0
Autor:
H. Walk, Steven D. Marcus, Wilfried Lerch, Judy W. Chow, Daniel F. Downey, Nicolaas Stolwijk, M. Schaefer, M. Glueck
Publikováno v:
ChemInform. 30
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd7e1cbe1217305d46c3613f1534ec78
https://doi.org/10.1002/chin.199944306
https://doi.org/10.1002/chin.199944306
Publikováno v:
Applied Physics Letters. 73:1263-1265
Ion implants of 1 keV 11B+ and 5 keV BF2+, to a dose of 1×1015/cm2 at a tilt angle of 0°, were implanted into preamorphized (Si+,70 keV, 1×1015/cm2) wafers. These samples were rapid thermal annealed in an ambient of 33 ppm of oxygen in N2 at very
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff0abae072434c230d7b855680c124e9
https://doi.org/10.1063/1.122146
https://doi.org/10.1063/1.122146
Publikováno v:
MRS Proceedings. 525
Ion implants of 1.0 keV 11B+, 5 keV BF 2+, and 2.0 keV As+ at a dose of IeI5/cm2 were rapid thermal annealed (RTA) in a STEAG AST-2800µ with varying percents of oxygen in N2, ranging from 0-lppm to 50,000 ppm to investigate the effects of low concen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9c8a9d44aa7d42696cd8e354a1e5f1d
https://doi.org/10.1557/proc-525-263
https://doi.org/10.1557/proc-525-263
Autor:
Steven D. Marcus, M. Schäfer, H. Marquardt, Daniel F. Downey, Judy W. Chow, H. Walk, M. Glück, Nicolaas Stolwijk, Wilfried Lerch
Publikováno v:
MRS Proceedings. 525
Rapid Thermal Annealing (RTA) is indispensable for the formation of ultra-shallow source/drain junctions. To improve the annealing conditions, a fundamental understanding of the influences on the diffusion/activation process is necessary. Ion implant
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e60c2c5ec96d87f0a49bc226d3bb8a03
https://doi.org/10.1557/proc-525-237
https://doi.org/10.1557/proc-525-237
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