Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Judon Stoeldraijer"'
Autor:
Rudy Peeters, Eelco van Setten, Jo Finders, Judon Stoeldraijer, Peter Kuerz, Ruben Maas, Kars Zeger Troost, Thomas Stammler, Paul Graeupner, Sjoerd Lok, Jos Benschop, Jan van Schoot
Publikováno v:
International Conference on Extreme Ultraviolet Lithography 2021.
While EUV systems equipped with a 0.33 Numerical Aperture (NA) lens are being applied in high volume manufacturing, ASML and ZEISS are in parallel ramping up their activities on an EUV exposure tool with an NA of 0.55. The purpose of this so-called h
Autor:
Jan Van Schoot, Sjoerd Lok, Eelco van Setten, Ruben Maas, Kars Troost, Rudy Peeters, Jo Finders, Judon Stoeldraijer, Jos Benschop, Paul Graeupner, Peter Kuerz, Winfried Kaiser, Thomas Stammler
Publikováno v:
Extreme Ultraviolet (EUV) Lithography XII.
Autor:
Eelco van Setten, Winfried Kaiser, Judon Stoeldraijer, Jos Benschop, Peter Kuerz, Paul Graeupner, Ruben Maas, Rudy Peeters, Jan van Schoot, Kars Zeger Troost, Jo Finders, Sjoerd Lok
Publikováno v:
Extreme Ultraviolet Lithography 2020
SPIE Photomask Technology + EUV Lithography
SPIE Photomask Technology + EUV Lithography
While EUV systems equipped with a 0.33 Numerical Aperture (NA) lens are entering high volume manufacturing, ASML and ZEISS are in parallel ramping up their activities on an EUV exposure tool with an NA of 0.55. The intent of this high-NA scanner, tar
Autor:
Sjoerd Lok, Lars Wischmeier, Jos Benschop, Rudy Peeters, Judon Stoeldraijer, Winfried Kaiser, Peter Kuerz, Eelco van Setten, Joerg Zimmerman, Kars Zeger Troost, Jan van Schoot, Paul Graeupner
Publikováno v:
Extreme Ultraviolet (EUV) Lithography XI.
While EUV systems equipped with a 0.33 Numerical Aperture (NA) lens are entering high volume manufacturing, ASML and ZEISS are in parallel ramping up their activities on an EUV exposure tool with an NA of 0.55. The intent of this high-NA scanner, tar
Autor:
Lars Wischmeier, Winfried Kaiser, Joost De Pee, Judon Stoeldraijer, Peter Kuerz, Jan van Schoot, Paul Graeupner, Joerg Mallmann
Publikováno v:
Extreme Ultraviolet (EUV) Lithography XI
For each lithography scanner the optics is a key component. While the NXE:3400 with ZEISS Starlith®3400 optics at Numerical Aperture of 0.33 is entering high-volume manufacturing in customer factories, we are developing high NA optics with a Numeric
Autor:
Jan van Schoot, Eelco van Setten, Kars Zeger Troost, Paul Graeupner, Rudy Peeters, Judon Stoeldraijer, Peter Kuerz, Jos Benschop, Joerg Zimmermann, Winfried Kaiser, Sjoerd Lok
Publikováno v:
International Conference on Extreme Ultraviolet Lithography 2019
While EUV systems equipped with a 0.33 Numerical Aperture (NA) lens are readying to start high volume manufacturing, ASML and ZEISS are in parallel ramping up their activities on an EUV exposure tool with an NA of 0.55. The purpose of this high-NA sc
Publikováno v:
35th European Mask and Lithography Conference (EMLC 2019)
EUV technology with its state-of-the-art tool generation equipped with a Numerical Aperture (NA) of 0.33 and providing 13 nm resolution is on the brink of entering high volume manufacturing. Extending the roadmap down to a resolution of 8 nm requires
Autor:
Jan van Schoot, Eelco van Setten, Jo Finders, Joerg Zimmermann, Judon Stoeldraijer, Peter Kuerz, Frank Bornebroek, Marco Pieters, Kars Zeger Troost, Winfried Kaiser, Sjoerd Lok, Rob van Ballegoij, Paul Graeupner
Publikováno v:
Extreme Ultraviolet (EUV) Lithography X
While EUV systems equipped with a 0.33 Numerical Aperture (NA) lens are readying to start high volume manufacturing, ASML and ZEISS are in parallel ramping up their activities on an EUV exposure tool with an NA of 0.55. The purpose of this high-NA sc
Autor:
Jan van Schoot, Kars Zeger Troost, Sascha Migura, Tilmann Heil, Jos Benschop, Hans Meiling, Sjoerd Lok, Jo Finders, Peter Krabbendam, Rob van Ballegoij, Judon Stoeldraijer, Eelco van Setten, Peter Kuerz, Bernhard Kneer, Winfried Kaiser, Frank Bornebroek
Publikováno v:
Extreme Ultraviolet (EUV) Lithography IX
While 0.33NA EUV systems are readying to start volume manufacturing, ASML and Zeiss are ramping up development activities on a 0.55NA EUV exposure tool, extending Moore’s law throughout the next decade. A novel, anamorphic lens design, has been dev
Autor:
Alberto Pirati, Joerg Mallmann, Uwe Stamm, Rudy Peeters, Martijn van Noordenburg, Daniel Smith, Sjoerd Lok, Eric Verhoeven, Hans Meiling, Herman Boom, Christian Wagner, Jan-Willem van der Horst, Geert Fisser, Michael Purvis, Igor V. Fomenkov, Arthur Winfried Eduardus Minnaert, Jo Finders, Carmen Zoldesi, Roderik van Es, Judon Stoeldraijer, David C. Brandt, Daniel Brown, Henk Meijer
Publikováno v:
Extreme Ultraviolet (EUV) Lithography VII
NXE:3300B scanners have been operational at customer sites since almost two years, and the NXE:3350B, the 4th generation EUV system, has started shipping at the end of 2015. All these exposure tools operate using MOPA pre-pulse source technology, whi