Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Judith Berens"'
Autor:
Maximilian W. Feil, Katja Waschneck, Hans Reisinger, Judith Berens, Thomas Aichinger, Paul Salmen, Gerald Rescher, Wolfgang Gustin, Tibor Grasser
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Autor:
Alexander Rockenbach, Suresh Sudarsan, Judith Berens, Michael Kosubek, Jaroslav Lazar, Philipp Demling, René Hanke, Philip Mennicken, Birgitta E. Ebert, Lars M. Blank, Uwe Schnakenberg
Publikováno v:
Metabolites, Vol 9, Iss 10, p 211 (2019)
Exploring the dynamic behavior of cellular metabolism requires a standard laboratory method that guarantees rapid sampling and extraction of the cellular content. We propose a versatile sampling technique applicable to cells with different cell wall
Externí odkaz:
https://doaj.org/article/0b4b4cd17851483182bacda2c6ee085a
Publikováno v:
Materials Science Forum. 1004:652-658
The interface between the gate oxide and silicon carbide (SiC) has a strong influence on the performance and reliability of SiC MOSFETs and thus, requires special attention. In order to reduce charge trapping at the interface, post oxidation anneals
Publikováno v:
IEEE Transactions on Electron Devices. 66:4692-4697
As the gate oxide (GOX)-SiC interface of SiC MOSFETs is crucial for device performance, it requires special attention. To improve interface quality, device performance, and reliability, commonly, a postoxidation anneal (POA) is applied. Different gas
Autor:
Judith Berens, Manesh V. Mistry, Dominic Waldhör, Alexander Shluger, Gregor Pobegen, Tibor Grasser
Publikováno v:
Microelectronics Reliability. 139:114789
Publikováno v:
Materials Science Forum. 963:175-179
We employed the thermal dielectric relaxation current method (TDRC) for the cryogenic characterization of ammonia (NH3) post oxidation annealed 4H silicon carbide (4H-SiC) trench MOSFETs. We studied differences and similarities between annealing in n
Autor:
Judith Berens, Thomas Aichinger
Publikováno v:
IRPS
The gate oxide reliability of SiC power MOSFETs can be significantly improved by sorting out devices with critical extrinsic defects using a voltage screening technique. Commonly, higher screening voltages result in more efficient screening and there
Autor:
Anna Regoutz, Curran Kalha, J. Zechner, Pardeep K. Thakur, J. J. Gutiérrez Moreno, Judith Berens, M. Reisinger, Laura E. Ratcliff, Sebastian Bichelmaier, Stephan Mohr, Nathalie K. Fernando, Michael Nelhiebel, Ty Lee
Publikováno v:
UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
Universitat Politècnica de Catalunya (UPC)
The binary alloy of titanium-tungsten (TiW) is an established diffusion barrier in high-power semiconductor devices, owing to its ability to suppress the diffusion of copper from the metallization scheme into the surrounding silicon substructure. How
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0b3762ba8c2b2d9f2b30ade3f2aaf698
http://arxiv.org/abs/2102.09845
http://arxiv.org/abs/2102.09845
Autor:
Birgitta E. Ebert, Suresh Sudarsan, Philipp Demling, René Hanke, Jaroslav Lazar, Philip Mennicken, Michael Kosubek, Judith Berens, Alexander Rockenbach, Lars M. Blank, Uwe Schnakenberg
Publikováno v:
Metabolites
Volume 9
Issue 10
Metabolites : open access journal 9(10), 211 (2019). doi:10.3390/metabo9100211
Metabolites, Vol 9, Iss 10, p 211 (2019)
Volume 9
Issue 10
Metabolites : open access journal 9(10), 211 (2019). doi:10.3390/metabo9100211
Metabolites, Vol 9, Iss 10, p 211 (2019)
Exploring the dynamic behavior of cellular metabolism requires a standard laboratory method that guarantees rapid sampling and extraction of the cellular content. We propose a versatile sampling technique applicable to cells with different cell wall
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c42ab810a02d4f9c72a2bbacee7ca49f
https://doi.org/10.20944/preprints201907.0290.v1
https://doi.org/10.20944/preprints201907.0290.v1
Autor:
Tomas Wiell, Manesh V. Mistry, Anna Regoutz, J. Matthias Kahk, Thomas Aichinger, Judith Berens, Sebastian Bichelmaier, Nathalie K. Fernando, Pardeep K. Thakur, Susanna K. Eriksson, Gregor Pobegen, Manfred Mascheck, Tien-Lin Lee, Johannes Lischner
SiC is set to enable a new era in power electronics impacting a wide range of energy technologies, from electric vehicles to renewable energy. Its physical characteristics outperform silicon in many aspects, including band gap, breakdown field, and t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bc1be92a8fc9d7f7316f610cccf415c5