Graded-gap AlxGa1−x As X-ray detector with collected charge multiplication

Autor: Silenas, A., Pozela, K. ^*, Dapkus, L., Jasutis, V., Juciene, V., Pozela, J., Smith, K.M.

Publikováno v: In Nuclear Inst. and Methods in Physics Research, A 21 August 2003 509(1-3):30-33

X-ray luminescence spectra of graded-gap Al xGa 1− xAs structures

Autor: Poþela, J. ^*, Poþela, K., Đilënas, A., Jasutis, V., Dapkus, L., Jucienë, V.

Publikováno v: In Nuclear Inst. and Methods in Physics Research, A 2001 460(1):41-44

Photoluminescence and electron subband population in modulation doped AlGaAs/GaAs/AlGaAs...

Autor: Pozela, J., Juciene, V., Namajunas, A., Pozela, K., Mokerov, V. G., Fedorov, Yu. V., Kaminskii, V. E., Hook, A. V.

Publikováno v: Journal of Applied Physics; 12/1/1997, Vol. 82 Issue 11, p5564, 4p, 3 Graphs

Decrease of Modfet channel conductivity with increasing sheet electron concentration

Autor: Pozela, J., Pozela, K., Juciene, V.

Publikováno v: Pozela, J. ; Pozela, K. ; Juciene, V. (2000) Decrease of Modfet channel conductivity with increasing sheet electron concentration. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

The great decrease of electron mobility with increasing sheet electron concentration ns in modulation-doped AlGaAs/GaAs/AlGaAs quantum wells is observed. This effect is explained by increasing scattering of degenerated electrons by polar optical phon

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