Zobrazeno 1 - 10
of 45
pro vyhledávání: '"Juan Trastoy"'
Bimodal ionic photomemristor based on a high-temperature oxide superconductor/semiconductor junction
Autor:
Ralph El Hage, Vincent Humbert, Victor Rouco, Gabriel Sánchez-Santolino, Aurelien Lagarrigue, Kevin Seurre, Santiago J. Carreira, Anke Sander, Jérôme Charliac, Salvatore Mesoraca, Juan Trastoy, Javier Briatico, Jacobo Santamaría, Javier E. Villegas
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-10 (2023)
Abstract Memristors, a cornerstone for neuromorphic electronics, respond to the history of electrical stimuli by varying their electrical resistance across a continuum of states. Much effort has been recently devoted to developing an analogous respon
Externí odkaz:
https://doaj.org/article/5b85cae63ec446929ed7346fe99ff16f
Autor:
Nathan Leroux, Danijela Marković, Dédalo Sanz-Hernández, Juan Trastoy, Paolo Bortolotti, Alejandro Schulman, Luana Benetti, Alex Jenkins, Ricardo Ferreira, Julie Grollier, Frank Alice Mizrahi
Publikováno v:
APL Machine Learning, Vol 1, Iss 3, Pp 036109-036109-8 (2023)
Extracting information from radio-frequency (RF) signals using artificial neural networks at low energy cost is a critical need for a wide range of applications from radars to health. These RF inputs are composed of multiple frequencies. Here, we sho
Externí odkaz:
https://doaj.org/article/c89c348a59e941df8ffe4b779cbb698b
Autor:
Jun-Wen Xu, Yizhang Chen, Nicolás M. Vargas, Pavel Salev, Pavel N. Lapa, Juan Trastoy, Julie Grollier, Ivan K. Schuller, Andrew D. Kent
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-6 (2021)
Abstract In a spintronic resonator a radio-frequency signal excites spin dynamics that can be detected by the spin-diode effect. Such resonators are generally based on ferromagnetic metals and their responses to spin torques. New and richer functiona
Externí odkaz:
https://doaj.org/article/d7bdc98b8cdc430dbd62e7a408df62c2
Autor:
Tomer Lewi, Nikita A. Butakov, Hayden A. Evans, Mark W. Knight, Prasad P. Iyer, David Higgs, Hamid Chorsi, Juan Trastoy, Javier Del Valle Granda, Ilya Valmianski, Christian Urban, Yoav Kalcheim, Paul Y. Wang, Philip W.C. Hon, Ivan K. Schuller, Jon A. Schuller
Publikováno v:
IEEE Photonics Journal, Vol 11, Iss 2, Pp 1-16 (2019)
Metasurfaces are two-dimensional nanostructures that allow unprecedented control of light through engineering the amplitude, phase, and polarization across meta-atom resonators. Adding tunability to metasurface components would boost their potential
Externí odkaz:
https://doaj.org/article/13ecc98222fb44799cdbe896efbd8d42
Autor:
Denis Crété, Julien Kermorvant, Yves Lemaître, Bruno Marcilhac, Salvatore Mesoraca, Juan Trastoy, Christian Ulysse
Publikováno v:
Micromachines, Vol 12, Iss 12, p 1588 (2021)
Arrays of superconducting quantum interference devices (SQUIDs) are highly sensitive magnetometers that can operate without a flux-locked loop, as opposed to single SQUID magnetometers. They have no source of ambiguity and benefit from a larger bandw
Externí odkaz:
https://doaj.org/article/56031b7135ae406b92333429c1fea86e
Autor:
Juan Trastoy, Yves Lemaître, Julien Kermorvant, Salvatore Mesoraca, Christian Ulysse, B. Marcilhac, Denis Crété
Publikováno v:
IEEE Transactions on Applied Superconductivity. 31:1-6
We compare the potential of SQUID arrays and Josephson junction arrays as magnetic field detectors in an open-loop configuration, accounting for such limitations as technological parameter fluctuations, current density distribution and self-field eff
Autor:
Juan Trastoy, Franck Fortuna, Silke Biermann, Yoav Kalcheim, Patrick Le Fèvre, Ivan K. Schuller, Maximilian Thees, Hiroshi Kumigashira, Min Han Lee, Marcelo J. Rozenberg, Emmanouil Frantzeskakis, Koji Horiba, Alexandre Zimmers, Andrés F. Santander-Syro, Rosa Luca Bouwmeester, Emma David, Pedro H. Rezende-Gonçalves, Nicolás Vargas
Publikováno v:
Science Advances
Science advances, 7(45):eabj1164. American Association for the Advancement of Science
Science advances, 7(45):eabj1164. American Association for the Advancement of Science
Description
This work shows how itinerant electrons localize due to increased interactions across the Mott metal-insulator transition.
In solids, strong repulsion between electrons can inhibit their movement and result in a “Mott” metal
This work shows how itinerant electrons localize due to increased interactions across the Mott metal-insulator transition.
In solids, strong repulsion between electrons can inhibit their movement and result in a “Mott” metal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::155b99f29762e69ad6fcd220ecffa9bb
http://arxiv.org/abs/2207.04287
http://arxiv.org/abs/2207.04287
Autor:
Andrew D. Kent, Julie Grollier, Ivan K. Schuller, Juan Trastoy, Jun-Wen Xu, Pavel N. Lapa, Yizhang Chen, Nicolás Vargas, Pavel Salev
Publikováno v:
Scientific Reports
Scientific Reports, Nature Publishing Group, 2021, 11 (1), ⟨10.1038/s41598-021-93404-4⟩
Scientific Reports, Vol 11, Iss 1, Pp 1-6 (2021)
Scientific Reports, Nature Publishing Group, 2021, 11 (1), ⟨10.1038/s41598-021-93404-4⟩
Scientific Reports, Vol 11, Iss 1, Pp 1-6 (2021)
In a spintronic resonator a radio-frequency signal excites spin dynamics that can be detected by the spin-diode effect. Such resonators are generally based on ferromagnetic metals and their responses to spin torques. New and richer functionalities ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b4ff75b8de7c986f1c382200c00af650
https://hal.archives-ouvertes.fr/hal-03451672
https://hal.archives-ouvertes.fr/hal-03451672
Autor:
Marie Drouhin, Shuai Li, Matthieu Grelier, Sophie Collin, Florian Godel, Robert G Elliman, Bruno Dlubak, Juan Trastoy, Damien Querlioz, Julie Grollier
Publikováno v:
Neuromorphic Computing and Engineering. 2:044008
Hardware spiking neural networks hold the promise of realizing artificial intelligence with high energy efficiency. In this context, solid-state and scalable memristors can be used to mimic biological neuron characteristics. However, these devices sh
Autor:
Alexander Cardona Rodríguez, Maria Gomez, Juan Trastoy, Juan C. Nino, Juan Gabriel Ramírez, Ivan K. Schuller, Christian Urban, I. C. Arango, María Elena Pardo Gómez, Soumitra Sulekar, C. Dominguez
Publikováno v:
Solid State Communications. 288:38-42
We studied the voltage-induced resistive switching (RS) in ferroelectric/metal (BiFeO3/Nb:SrTiO3) vertical devices. We found switching with RON and ROFF ratios of ΔR = 1-RON/ROFF = 0.82 at voltages starting at VSET, RESET = ±2 V. Upon increasing vo