Zobrazeno 1 - 10
of 39
pro vyhledávání: '"Juan M. López-González"'
Autor:
Juan M. López-González, José Tuells
Publikováno v:
Gaceta Sanitaria, Vol 20, Iss 3, Pp 244-247 (2006)
Las situaciones de conflicto armado suponen un hándicap para la erradicación de la poliomielitis por las dificultades de acceso a la población susceptible. En Afganistán, tras la operación militar que supuso la caída del régimen talibán, se l
Externí odkaz:
https://doaj.org/article/acf23d0d292c42af9106fce95467a1be
Autor:
Miguel Morales, Cristobal Voz, Juan M. López-González, Pedro A. Ortega, Carlos Molpeceres, S. Lauzurica, D. Canteli, Eloi Ros, C. Munoz-Garcia
Publikováno v:
UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
Universitat Politècnica de Catalunya (UPC)
© 2022 Elsevier. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/ In this paper, we present a study of the laser scribing of WOx, VOx, and MoOx films, deposited onto crysta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::591ffc7d3476cdee15b60acdb16092c6
Autor:
Ramon Alcubilla, Juan M. López-González, Lourdes F. Vega, Isidro Martín, A. Roigé, Cristobal Voz, Pedro A. Ortega, J. O. Ossó
Publikováno v:
UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
Recercat. Dipósit de la Recerca de Catalunya
instname
Universitat Politècnica de Catalunya (UPC)
Recercat. Dipósit de la Recerca de Catalunya
instname
Laser firing processes have emerged as a technologically feasible approach for the fabrication of local point contacts or local doped regions in advanced high-efficiency crystalline-Si (c-Si) solar cells. In this work, we analyze the local impact ind
Autor:
R. Khoury, Ramon Alcubilla, P. Bulkin, Juan M. López-González, Erik Johnson, L. Zeyu, Isidro Martín, Gema López, Chen Jin
Publikováno v:
2017 IEEE 44th Photovoltaic Specialist Conference (PVSC).
We examine the electrical benefits of creating contacts with sizes in the 1 μm range on partially contacted surfaces for c-Si PERC/L solar cells. In such a design, a dielectric layer that provides surface passivation is periodically opened to create
Autor:
Juan M. López-González, Pablo Ortega, Gema López, David Carrió, Ramon Alcubilla, Isidro Martín, Cristobal Voz, Albert Orpella
Publikováno v:
UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
Recercat. Dipósit de la Recerca de Catalunya
Universitat Jaume I
Universitat Politècnica de Catalunya (UPC)
Recercat. Dipósit de la Recerca de Catalunya
Universitat Jaume I
In this work 3D simulations are used to study the impact of technological parameters on device performance of c-Si interdigitated back-contacted IBC solar cells with point-like doped contacts. In these cells, the highly-doped regions are defined in a
Publikováno v:
Progress in Photovoltaics: Research and Applications. 23:69-77
Rear surface of high-efficiency crystalline silicon solar cells is based on a combination of dielectric passivation and point-like contacts. In this work, we develop a 3D model for these devices based on 2.2 Ωcm p-type crystalline silicon substrates
Autor:
Juan M. López-González, Ramon Alcubilla, Carmen López-López, Emilio Sanchez-Cortezon, María D. Alba, Jose-Maria Delgado-Sanchez, Albert Orpella
Publikováno v:
Digital.CSIC. Repositorio Institucional del CSIC
instname
Recercat. Dipósit de la Recerca de Catalunya
UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
instname
Recercat. Dipósit de la Recerca de Catalunya
UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
Cu(In,Ga)Se (CIGS) technology is one of the best absorber materials with record efficiencies among photovoltaic thin-film technologies (22.3% at lab scale and 16% at large commercial module). Although research on this material was originally motivate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e3496ad01c32dc0780d33ad3e395c881
http://hdl.handle.net/10261/148640
http://hdl.handle.net/10261/148640
Autor:
Juan M. López-González
Publikováno v:
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields. 22:411-421
This paper describes the DC and small-signal performance of two InGaP/GaAs heterojunction bipolar transistors (HBTs) that have the same chip size. This is done in order to compare emitter–base designs using the TCAD ATLAS device simulator. The HBT
Autor:
Joaquim Puigdollers, Albert Orpella, J. Muñoz, Isidro Martín, Cristobal Voz, Juan M. López-González, D.C. Sinde, Ramon Alcubilla, Pablo Ortega
Publikováno v:
Recercat. Dipósit de la Recerca de Catalunya
instname
UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
instname
UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
One of the most common strategies in high-efficiency crystalline silicon (c-Si) solar cells for the rear surface is the combination of a dielectric passivation with a point-like contact to the base. In such devices, the trade-off between surface pass
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::560aa6801f7547f58eb1d8a1003f154d
https://hdl.handle.net/2117/84986
https://hdl.handle.net/2117/84986
Autor:
Juan M. López-González, José Tuells
Publikováno v:
Gaceta Sanitaria v.20 n.3 2006
SciELO España. Revistas Científicas Españolas de Ciencias de la Salud
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SciELO España. Revistas Científicas Españolas de Ciencias de la Salud
instname
ResumenLas situaciones de conflicto armado suponen un handicap para la erradicación de la poliomielitis por las dificultades de acceso a la población susceptible. En Afganistán, tras la operación militar que supuso la caída del régimen talibán