Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Juan G. Alzate"'
Autor:
Umut Arslan, Philip E. Heil, Smith Angeline K, Pedro A. Quintero, Ouellette Daniel G, Juan G. Alzate, Sell Bernhard, Smith Andrew, Fatih Hamzaoglu, M. Seth, Pellegren James, M. Mainuddin, Tahir Ghani, Y. J. Chen, P. Bai, Rownak Jahan, Tanmoy Pramanik, Tofizur Rahman, Liqiong Wei, Justin S. Brockman, Conor P. Puls, P. Hentges, M. Sekhar, Aaron J. Littlejohn, Kevin J. Fischer, Oleg Golonzka, Christopher J. Wiegand, Nilanjan Das
Publikováno v:
2019 IEEE International Electron Devices Meeting (IEDM).
In this paper, we discuss array-level MTJ process, performance, and reliability requirements for STT-MRAM operation in an L4 Cache application. We demonstrate 2 MB arrays of scaled-size MTJ devices capable of meeting L4 Cache specifications across al
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::adee6532309b9d4a14a290211f8a3a0c
https://doi.org/10.1109/iedm19573.2019.8993474
https://doi.org/10.1109/iedm19573.2019.8993474
Autor:
Fatih Hamzaoglu, Justin S. Brockman, Kevin J. Fischer, Tanmoy Pramanik, Oleg Golonzka, J. Hicks, Chris Connor, Juan G. Alzate, J. O'Donnell
Publikováno v:
IRPS
Assessing product-level retention performance of a perpendicular spin-transfer torque magnetic random access memory (STT-MRAM, or MRAM for short) for non-volatile applications requires extrapolation of retention data measured on a relatively small nu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a852172700b5d94fb63641819197738a
https://doi.org/10.1109/irps.2019.8720520
https://doi.org/10.1109/irps.2019.8720520
Autor:
Jim OrDonnell, Fatih Hamzaoglu, Tahir Ghani, Kevin J. Fischer, Justin S. Brockman, Oleg Golonzka, Christopher J. Wiegand, Liqiong Wei, Nilanjan Das, Umut Arslan, Pulkit Jain, Blake C. Lin, Juan G. Alzate, Tanaya Sahu, Pedro A. Quintero, Mesut Meterelliyoz, P. Hentges, M. Sekhar, Ajay Vangapaty, Conor P. Puls, Rawshan Jahan
Publikováno v:
ISSCC
STT-MRAM has been emerging as a very-promising high-density embedded non-volatile memory (eNVM) [1], [2]. Embedded Flash memory has been the leading eNVM technology, but STT-MRAM has been developed as a better solution for continuing scaling, speed a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f15f74d871c0ad943ef0fee492be78b5
https://doi.org/10.1109/isscc.2019.8662444
https://doi.org/10.1109/isscc.2019.8662444
Autor:
Mesut Meterelliyoz, Tahir Ghani, Kevin J. Fischer, O'brien Kevin P, Pellegren James, Dmitri E. Nikonov, J.O Donnell, Chris Connor, Nilanjan Das, P. Nguyen, Smith Andrew, Buford Benjamin, Pedro A. Quintero, P. Hentges, Justin S. Brockman, M. Seth, M. Mainuddin, Philip E. Heil, Smith Angeline K, Brian S. Doyle, Rownak Jahan, Z. Zhang, David L. Kencke, M. Bohr, Liqiong Wei, P. Bai, Tofizur Rahman, M. Lu, Blake C. Lin, M. Sekhar, Conor P. Puls, Kaan Oguz, Joodong Park, A. Selarka, A. Romang, Oleg Golonzka, Christopher J. Wiegand, Juan G. Alzate, Ouellette Daniel G, Umut Arslan, Fatih Hamzaoglu
Publikováno v:
2018 IEEE International Electron Devices Meeting (IEDM).
This paper presents key features of MRAM-based non-volatile memory embedded into Intel 22FFL technology. 22FFL is a high performance, ultra low power FinFET technology for mobile and RF applications with extensive high voltage and analog support, and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7ba36237ea81a7d30a38bf6d3d89035
https://doi.org/10.1109/iedm.2018.8614620
https://doi.org/10.1109/iedm.2018.8614620
Publikováno v:
Applied Physics Letters. 116:192408
A micromagnetic study of the thermal stability and magnetization switching by spin-polarized current in Perpendicular Magnetic Tunnel Junctions comprising a four-layer stack of free layer, reference layer, and synthetic antiferromagnets is presented.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8691ef45fe59645f343633f97c7bf32
https://doi.org/10.1063/5.0005211
https://doi.org/10.1063/5.0005211
Autor:
Cecile Grezes, Juan G. Alzate, Mustafa Akyol, Berthold Ocker, Xiang Li, Qi Hu, Hochul Lee, Pedram Khalili Amiri, Jordan A. Katine, Kin Fai Ellick Wong, Jürgen Langer, Kang L. Wang, Farbod Ebrahimi, Guoqiang Yu, Qiming Shao, Xue Qing Cai
Publikováno v:
IEEE Transactions on Magnetics. 51:1-7
We review the recent progress in the development of magnetoelectric RAM (MeRAM) based on electric-field-controlled writing in magnetic tunnel junctions (MTJs). MeRAM uses the tunneling magnetoresistance effect for readout in a two-terminal memory ele
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b24d4479cea1371630841b8686623cb
https://doi.org/10.1109/tmag.2015.2443124
https://doi.org/10.1109/tmag.2015.2443124
Autor:
Hochul Lee, Juan G. Alzate, Richard Dorrance, Pedram Khalili Amiri, Dejan Markovic, Xue Qing Cai, Kang L. Wang
Publikováno v:
IEEE Transactions on Magnetics. 51:1-7
A high-speed and low-power prepared and write sense amplifier (PWSA) is presented for magnetoresistive RAM (MRAM). The sense amplifier incorporates a writing circuit for MRAM bits switched via timing of precessional dynamics (~GHz speed) in a magneti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e46106c37547084fdb0394b23e3676e3
https://doi.org/10.1109/tmag.2014.2367130
https://doi.org/10.1109/tmag.2014.2367130
Autor:
Yabin Fan, Scott A. Bender, Li-Te Chang, Yaroslav Tserkovnyak, Jianshi Tang, Ying Jiang, Yong Wang, Guoqiang Yu, So Takei, Kang L. Wang, Murong Lang, Juan G. Alzate, Kin L. Wong, Wanjun Jiang, Pramey Upadhyaya, Pedram Khalili Amiri
Publikováno v:
Nature Nanotechnology. 9:548-554
Magnetization switching by current-induced spin-orbit torques (SOTs) is of great interest due to its potential applications for ultralow-power memory and logic devices. In order to be of technological interest, SOT effects need to switch ferromagnets
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1eb6669342b556dc7305287489e354ad
https://doi.org/10.1038/nnano.2014.94
https://doi.org/10.1038/nnano.2014.94
Autor:
Juan G. Alzate, Yabin Fan, Mohammad Montazeri, Xiang Li, Mustafa Akyol, Kin L. Wong, Congli He, Kang L. Wang, Pramey Upadhyaya, Guoqiang Yu, Murong Lang, Pedram Khalili Amiri
Publikováno v:
Scientific Reports
Current-induced spin-orbit torques (SOTs) in structurally asymmetric multilayers have been used to efficiently manipulate magnetization. In a structure with vertical symmetry breaking, a damping-like SOT can deterministically switch a perpendicular m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b38c1c2c0392f7daf57bb977332d2b12
http://europepmc.org/articles/PMC4822117
http://europepmc.org/articles/PMC4822117
Autor:
Farbod Ebrahimi, Jordan A. Katine, Kang L. Wang, Jürgen Langer, P. Khalili Amiri, Xue Qing Cai, Berthold Ocker, Cecile Grezes, Juan G. Alzate
Publikováno v:
Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2016, 108 (1), pp.012403. ⟨10.1063/1.4939446⟩
Applied Physics Letters, American Institute of Physics, 2016, 108 (1), pp.012403. ⟨10.1063/1.4939446⟩
We report electric-field-induced switching with write energies down to 6 fJ/bit for switching times of 0.5 ns, in nanoscale perpendicular magnetic tunnel junctions (MTJs) with high resistance-area product and diameters down to 50 nm. The ultra-low sw
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0d6369362ad48fccc5a4a3db95a243de
https://hal.archives-ouvertes.fr/hal-03145419
https://hal.archives-ouvertes.fr/hal-03145419
