Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Juan Buxo"'
Publikováno v:
Microelectronics Journal. 30:551-561
In this paper, a new concept of lateral DMOSFET for medium voltage (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5860d72fdb30e376dd8f879a2e826d87
https://doi.org/10.1016/s0026-2692(98)00178-5
https://doi.org/10.1016/s0026-2692(98)00178-5
Autor:
Ben Gilsdorf, Jy-Der Tai, D. Warren, K. Papworth, John H. Quigley, T. Sawan, James S. Thomas, L. Layton, M. Mazuelos, J. Quarberg, R. Parmar, Merit Y. Hong, M. Schriber, Juan Buxo, B. Smith, Robert B. Davies, Berens Michael Todd, James R. Feddeler, J.H. Carlquist, Eytan Hartung, K. Bass, Andreas A. Wild, F. Shapiro, David F. Mietus, S. Ledford, James S. Caravella
Publikováno v:
IEEE Journal of Solid-State Circuits. 32:1049-1055
A 0.9-1.6-V, 1-MHz, 8-b microcontroller based on the 68HC08 architecture is presented. In addition to standard digital microcontroller functions, the chip features RAM, ROM, phase-locked loop (PLL) clock synthesis, and liquid crystal displays (LCD) d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac2fceb6f7a6b1959de4991063ebb0e8
https://doi.org/10.1109/4.597295
https://doi.org/10.1109/4.597295
Publikováno v:
Microelectronic Engineering. 28:155-161
The variations in current induced by variations in the (horizontal) doping profile between channel and drain or source can be described in terms of variations in the effective channel length L EFF induced by the variations in the doping profile of so
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b4ca320226f9934db013aa2cacb4408
https://doi.org/10.1016/0167-9317(95)00035-7
https://doi.org/10.1016/0167-9317(95)00035-7
Publikováno v:
11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312).
In this paper, a new concept of lateral DMOSFET for smart power integrated circuits is proposed, in which a vertical trench is used under the gate end in the drift region.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c801f524e62f2b6c96c00d67404a030
https://doi.org/10.1109/ispsd.1999.764055
https://doi.org/10.1109/ispsd.1999.764055
Publikováno v:
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351).
In this paper, a new concept of lateral DMOSFET for medium voltage (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8965aafc3e02d0a7b407cc3c5a7aab14
https://doi.org/10.1109/smicnd.1998.732307
https://doi.org/10.1109/smicnd.1998.732307