Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Ju-Yeon Won"'
Autor:
Ju yeon Won, Sukyung Kim, Young-Ik Son, Jong Ho Cho, Tae Yeon Jeon, Joungho Han, Yae-Jean Kim, Ji Won Lee, Jihyun Kim, Kangmo Ahn
Publikováno v:
Allergy, Asthma & Respiratory Disease. 10:45
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc049e45d38fd42933b1d9d878e13754
https://doi.org/10.4168/aard.2022.10.1.45
https://doi.org/10.4168/aard.2022.10.1.45
Autor:
Jae Kyeong Jeong, Sung-Yong Min, Yeongjun Lee, Ju Yeon Won, Su-Hun Jeong, Wentao Xu, Tae-Woo Lee, Hobeom Kim, Tae-Sik Kim
Publikováno v:
Advanced Materials. 28:9109-9116
A versatile metal nanowiring platform enables the fabrication of Ag nanowires (AgNW) at a desired position and orientation in an individually controlled manner. A printed, flexible AgNW has a diameter of 695 nm, a resistivity of 5.7 μΩ cm, and good
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::07069d97730ce7891ccb7886239c9e3f
https://doi.org/10.1002/adma.201602855
https://doi.org/10.1002/adma.201602855
Publikováno v:
Thin Solid Films. 603:268-271
The device performance of amorphous In–Zn–O ( a -IZO) thin-film transistors (TFTs) with printed Cu contacts was significantly improved by the insertion of a diffusion barrier Ta layer and rapid thermal process (RTP) annealing. Furnace-annealed a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::131a8e5b41ff4143d5f278eacd633918
https://doi.org/10.1016/j.tsf.2016.02.032
https://doi.org/10.1016/j.tsf.2016.02.032
Publikováno v:
physica status solidi (RRL) - Rapid Research Letters. 8:924-927
The effects of antimony (Sb) doping on solution-processed indium oxide (InOx) thin film transistors (TFTs) were examined. The Sb-doped InSbO TFT exhibited a high mobility, low gate swing, threshold voltage, and high ION/OFF ratio of 4.6 cm2/V s, 0.29
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c9de1bf04304e30e1b101399c426f86
https://doi.org/10.1002/pssr.201409402
https://doi.org/10.1002/pssr.201409402
Autor:
Ju Yeon Won, Ji Hun Song, Ah Young Hwang, So Yeon Je, Hyo Jin Kim, Byeong Geun Son, Chang Kyu Lee, Jae Kyeong Jeong, Chul Kyu Lee, Rino Choi
Publikováno v:
physica status solidi (RRL) - Rapid Research Letters. 7:485-488
Spin-coated zirconium oxide films were used as a gate dielectric for low-voltage, high performance indium zinc oxide (IZO) thin-film transistors (TFTs). The ZrO2 films annealed at 400 °C showed a low gate leakage current density of 2 × 10–8 A/cm2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d1a7c8393833cf22211bf228435392d
https://doi.org/10.1002/pssr.201307128
https://doi.org/10.1002/pssr.201307128
Publikováno v:
IEEE Electron Device Letters. 35:455-457
The effects of oxygen (O2) and nitrous oxygen (N2O) high pressure annealing (HPA) on soluble indium-zinc oxide (IZO) thin-film transistors (TFTs) were compared. The N2O HPA treatment produced superior device performance compared with the O2 HPA treat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3de1ca09bfdf6ff10b7a38c920ecf850
https://doi.org/10.1109/led.2014.2302841
https://doi.org/10.1109/led.2014.2302841
Publikováno v:
Journal of the Korean Institute of Electrical and Electronic Material Engineers. 22:506-511
For the application of the photosensitive barrier ribs with optimal properties such as glass transition temperature, refractive index and coefficient thermal expansion, the boro-silicate glasses was studied. The glass transition temperature, coeffici
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3d452b3532aa8122311a28b2966fe05
https://doi.org/10.4313/jkem.2009.22.6.506
https://doi.org/10.4313/jkem.2009.22.6.506
Publikováno v:
Materials Science Forum. 569:349-352
Photolithographic process is one of the eco-friendly processes for forming the pattern of the barrier ribs in PDP. Controlling the refractive index of glass is important to develop a photosensitive paste for photolithographic process. We studied the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09e8773d7671db62adadd0d7a2a5c4a1
https://doi.org/10.4028/www.scientific.net/msf.569.349
https://doi.org/10.4028/www.scientific.net/msf.569.349
Publikováno v:
ACS applied materialsinterfaces. 8(2)
Nonvacuum and photolithography-free copper (Cu) films were prepared by reverse offset printing. The mechanical, morphological, structural, and chemical properties of the Cu films annealed at different temperatures were examined in detail. The Ostwald
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::29c76dd94d9915ecf9414c8c28e5270a
https://pubmed.ncbi.nlm.nih.gov/26716349
https://pubmed.ncbi.nlm.nih.gov/26716349
Autor:
Bong Hae Jeong, Ju Yeon Won
Publikováno v:
Journal of Sport and Leisure Studies. 19:129-143
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c14ecf32aacd0ef30db41ad54d9a80ce
https://doi.org/10.51979/kssls.2003.05.19.129
https://doi.org/10.51979/kssls.2003.05.19.129