Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Ju Yun Choi"'
Autor:
Young Dong Kim, Tae Woong Kim, Jinho Joo, Sanghyub Lee, Ju Yun Choi, Hyoungsub Kim, Geun Chul Park, Soo Min Hwang, Jae Jin Yoon, Seung Muk Lee, Tae Jung Kim, Soon Yong Hwang, Jun Hyung Lim
Publikováno v:
Materials Chemistry and Physics. 145:168-175
Ti-silicate/Si films were synthesized using a solution deposition route, and the effects of a rapid thermal process (RTP) on the microstructure, chemical bonding state, and interfacial layer (IL) properties were investigated and correlated to the per
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6a88df3438377eca6b0ab3f4f122a1e
https://doi.org/10.1016/j.matchemphys.2014.01.055
https://doi.org/10.1016/j.matchemphys.2014.01.055
Autor:
Tae Woong Kim, Jun Hyung Lim, Ju Yun Choi, Hyoungsub Kim, Seung Muk Lee, Soon Yong Hwang, Joong Keun Park, Jinho Joo, Soo Min Hwang, Young Dong Kim, Tae Jung Kim
Publikováno v:
Current Applied Physics. 13:S41-S44
Nanoscale thick Ti-silicate films were synthesized by the solution process on Si(100) substrates, followed by post annealing of rapid thermal process (RTP). The film retained its amorphous structure with a remarkably enhanced permittivity ( k ) value
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ecbf1d7ebb711bd03815509322f166e
https://doi.org/10.1016/j.cap.2013.01.003
https://doi.org/10.1016/j.cap.2013.01.003
Publikováno v:
Japanese Journal of Applied Physics. 50:096504
For the fabrication of a low-cost and transparent amorphous InGaZnO (a-IGZO) thin film transistor (TFT), the possibility of using semiconducting and conducting, a-IGZO films as the channel and source/drain (S/D) electrode layers, respectively, was in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::81a7b86abb8e14a6fb961bee9d7a31fb
https://doi.org/10.1143/jjap.50.096504
https://doi.org/10.1143/jjap.50.096504
Publikováno v:
Journal of The Electrochemical Society. 158:G141
This study presents an examination of the interfacial and electrical properties of HfO 2 films grown by plasma-enhanced atomic layer deposition with tetrakis(diethylmethylamino) hafnium and O 2 precursors on GaAs substrates cleaned with HF and then (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e95b651a130ad4044e01ba37b34f5d8
https://doi.org/10.1149/1.3569751
https://doi.org/10.1149/1.3569751
Autor:
Nayoung Ko, Deog-Bon Koo, Gi-Sun Im, Ji-Su Kim, Seongsoo Hwang, Soo-Bong Park, Jae-Seok Woo, Ju-Yun Choi, Keon Bong Oh
Publikováno v:
Biology of Reproduction. 83:396-396
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc371962634974a62543aec27e5cdfca
https://doi.org/10.1093/biolreprod/83.s1.396
https://doi.org/10.1093/biolreprod/83.s1.396
Publikováno v:
Journal of The Electrochemical Society; 2011, Vol. 158 Issue 6, pG141-G145, 5p, 2 Charts, 5 Graphs
Publikováno v:
Journal of The Electrochemical Society; 2011, Vol. 158 Issue 6, pG133-G136, 4p, 2 Charts, 5 Graphs
Publikováno v:
Applied Physics Letters; 6/29/2009, Vol. 94 Issue 26, p262901, 3p, 4 Graphs