Výsledky vyhledávání

Versatile Metal Nanowiring Platform for Large-Scale Nano- and Opto-Electronic Devices

Autor: Jae Kyeong Jeong, Sung-Yong Min, Yeongjun Lee, Ju Yeon Won, Su-Hun Jeong, Wentao Xu, Tae-Woo Lee, Hobeom Kim, Tae-Sik Kim

Publikováno v: Advanced Materials. 28:9109-9116

A versatile metal nanowiring platform enables the fabrication of Ag nanowires (AgNW) at a desired position and orientation in an individually controlled manner. A printed, flexible AgNW has a diameter of 695 nm, a resistivity of 5.7 μΩ cm, and good

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::07069d97730ce7891ccb7886239c9e3f
https://doi.org/10.1002/adma.201602855

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Transport property improvements of amorphous In–Zn–O transistors with printed Cu contacts via rapid temperature annealing

Autor: Young Hun Han, Hyun Ju Seol, Ju Yeon Won, Jae Kyeong Jeong, Ki June Lee, Rino Choi

Publikováno v: Thin Solid Films. 603:268-271

The device performance of amorphous In–Zn–O ( a -IZO) thin-film transistors (TFTs) with printed Cu contacts was significantly improved by the insertion of a diffusion barrier Ta layer and rapid thermal process (RTP) annealing. Furnace-annealed a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::131a8e5b41ff4143d5f278eacd633918
https://doi.org/10.1016/j.tsf.2016.02.032

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Effect of antimony doping on the low-temperature performance of solution-processed indium oxide thin film transistors

Autor: Hyo Jin Kim, So Yeon Je, Ju Yeon Won, Jong Han Baek, Jae Kyeong Jeong

Publikováno v: physica status solidi (RRL) - Rapid Research Letters. 8:924-927

The effects of antimony (Sb) doping on solution-processed indium oxide (InOx) thin film transistors (TFTs) were examined. The Sb-doped InSbO TFT exhibited a high mobility, low gate swing, threshold voltage, and high ION/OFF ratio of 4.6 cm2/V s, 0.29

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0c9de1bf04304e30e1b101399c426f86
https://doi.org/10.1002/pssr.201409402

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High-performance In-Zn-O thin-film transistors with a soluble processed ZrO2 gate insulator

Autor: Ju Yeon Won, Ji Hun Song, Ah Young Hwang, So Yeon Je, Hyo Jin Kim, Byeong Geun Son, Chang Kyu Lee, Jae Kyeong Jeong, Chul Kyu Lee, Rino Choi

Publikováno v: physica status solidi (RRL) - Rapid Research Letters. 7:485-488

Spin-coated zirconium oxide films were used as a gate dielectric for low-voltage, high performance indium zinc oxide (IZO) thin-film transistors (TFTs). The ZrO2 films annealed at 400 °C showed a low gate leakage current density of 2 × 10–8 A/cm2

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9d1a7c8393833cf22211bf228435392d
https://doi.org/10.1002/pssr.201307128

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Effect of Nitrous Oxide High Pressure Annealing on the Performance of Low Temperature, Soluble-Based IZO Transistors

Autor: Chul-Kyu Lee, Byeong Geun Son, Hyo Jin Kim, So Yeon Je, Jae Kyeong Jeong, Ju Yeon Won

Publikováno v: IEEE Electron Device Letters. 35:455-457

The effects of oxygen (O2) and nitrous oxygen (N2O) high pressure annealing (HPA) on soluble indium-zinc oxide (IZO) thin-film transistors (TFTs) were compared. The N2O HPA treatment produced superior device performance compared with the O2 HPA treat

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3de1ca09bfdf6ff10b7a38c920ecf850
https://doi.org/10.1109/led.2014.2302841

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Refractive Indices and Densities of B2O3-Al2O3-SiO2Glass System for Photosensitive Barrier Ribs of Plasma Display Panel

Autor: Seongjin Hwang, Hyungsun Kim, Ju-Yeon Won, Sangho Lee

Publikováno v: Journal of the Korean Institute of Electrical and Electronic Material Engineers. 22:506-511

For the application of the photosensitive barrier ribs with optimal properties such as glass transition temperature, refractive index and coefficient thermal expansion, the boro-silicate glasses was studied. The glass transition temperature, coeffici

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b3d452b3532aa8122311a28b2966fe05
https://doi.org/10.4313/jkem.2009.22.6.506

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Refractive Index of SiO2-B2O3-Al2O3 Glasses

Autor: Jung Ki Lee, Dong Sun Kim, Hyungsun Kim, Ju Yeon Won, Sangwook Lee, Seong Jin Hwang

Publikováno v: Materials Science Forum. 569:349-352

Photolithographic process is one of the eco-friendly processes for forming the pattern of the barrier ribs in PDP. Controlling the refractive index of glass is important to develop a photosensitive paste for photolithographic process. We studied the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::09e8773d7671db62adadd0d7a2a5c4a1
https://doi.org/10.4028/www.scientific.net/msf.569.349

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High Performance Metal Oxide Field-Effect Transistors with a Reverse Offset Printed Cu Source/Drain Electrode

Autor: Hyun Seok Yoo, Ju Yeon Won, Jae Kyeong Jeong, Young Hun Han, Jae Hyun Kim, Rino Choi

Publikováno v: ACS applied materialsinterfaces. 8(2)

Nonvacuum and photolithography-free copper (Cu) films were prepared by reverse offset printing. The mechanical, morphological, structural, and chemical properties of the Cu films annealed at different temperatures were examined in detail. The Ostwald

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::29c76dd94d9915ecf9414c8c28e5270a
https://pubmed.ncbi.nlm.nih.gov/26716349

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