Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Ju An'an"'
Autor:
Hong-Xia Guo, Fengqi Zhang, Zhang Hong, Xiaoyu Pan, Jinshun Bi, Zhong Xiangli, Lili Ding, Ju An'an
Publikováno v:
IEEE Transactions on Nuclear Science. 68:2508-2515
This article mainly focuses on the single event function interruption (SEFI) and single event latch-up (SEL) of 90 nm NOR flash memories. Devices were irradiated by ions with different linear energy transfer (LET) values from 12.9 to $65.8~MeV\cdot c
Autor:
Zhao-qiao Gu, Hong-Xia Guo, Zhang Hong, Pan Xiaoyu, Xiaoping Ouyang, Liu Yitian, Fengqi Zhang, Ju An'an
Publikováno v:
Chinese Physics B. 31:018501
The energy deposition and electrothermal behavior of SiC metal–oxide–semiconductor field-effect transistor (MOSFET) under heavy ion radiation are investigated based on Monte Carlo method and TCAD numerical simulation. The Monte Carlo simulation r
Autor:
Hong-Xia Guo, Ju An'an, Zhao-qiao Gu, Xiaoyu Pan, Xiao-ping Ouyang, Xiangli Zhong, Lei Zhifeng, Liu Yitian, Zhang Hong, Fengqi Zhang
Publikováno v:
Microelectronics Reliability. 124:114329
Proton-induced degradation and catastrophic failures in 650 V SiC diode and 900 V SiC MOSFET under different bias voltage and different proton energy are investigated. The experimental results show that when the bias voltage of SiC diode and MOSFET r
Autor:
Ling Lv, Dong Shijian, Lei Zhifeng, Ju An'an, Shaozhong Yue, Wu-Ying Ma, Hao Ruijing, Hong-Xia Guo, Zhong Xiangli, Xiaoping Ouyang, Xiao-Yu Pan
Publikováno v:
Acta Physica Sinica. 69:078501
In this paper, the total dose effect on AlGaN/GaN high-electron-mobility transistor (HEMT) devices after 60Co γ-ray irradiation with a total dose of 1 Mrad(Si) was investigated at different biases (VGS = –3 V, VDS = 0.5 V; VGS = –1.9 V, VDS = 0.